STGD6NC60HT4 Allicdata Electronics

STGD6NC60HT4 Discrete Semiconductor Products

Allicdata Part #:

497-5113-2-ND

Manufacturer Part#:

STGD6NC60HT4

Price: $ 0.57
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: IGBT 600V 15A 56W DPAK
More Detail: IGBT 600V 15A 56W Surface Mount D-Pak
DataSheet: STGD6NC60HT4 datasheetSTGD6NC60HT4 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 3 (168 Hours)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
2500 +: $ 0.51795
Stock 1000Can Ship Immediately
$ 0.57
Specifications
Power - Max: 56W
Base Part Number: STG*6NC
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 390V, 3A, 10 Ohm, 15V
Td (on/off) @ 25°C: 12ns/76ns
Gate Charge: 13.6nC
Input Type: Standard
Switching Energy: 20µJ (on), 68µJ (off)
Series: PowerMESH™
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 3A
Current - Collector Pulsed (Icm): 21A
Current - Collector (Ic) (Max): 15A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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The STGD6NC60HT4 is an integrated gate bipolar transistor, or IGBT, manufactured by STMicroelectronics. IGBTs are power transistors, used to switch or amplify high-power electrical signals. The STGD6NC60HT4 specifically is a single IGBT, which means that it has just one semiconductor substrate to allow for a single current flow in one direction. This is in contrast to a dual IGBT which has two substrates, which can carry a current in two directions, allowing for a higher power capability. The STGD6NC60HT4 is designed for use in power conversion systems and motor controls and is able to handle high voltages.The STGD6NC60HT4 is designed to switch power by controlling the flow of current in and out of the transistor. This process begins when the gate terminal is given a signal from the control circuit, which is a pulse-width modulation signal. This signal allows for regulation of the power and the current flowing through the transistor. When the signal is given and the power rises, the transistor is said to be in on-state. This state is maintained until the signal is reversed, turning the transistor off. The turn-on and turn-off times are both fast, allowing for quick switching of the power.The STGD6NC60HT4 also has safety features to protect it from damage in the event of over-current, overheating, or improper gate signals. The transistor is built with a fast reverse-recovery-time body diode, which is able to conduct current quickly and safely when the gate signal is reversed. This prevents any damaging currents from flowing in the wrong direction. Additionally, there is a built-in temperature-protection circuit, which can detect if the temperature of the transistor is getting too high. If so, it will shut down the transistor to prevent damage.The STGD6NC60HT4 is designed to be a versatile and reliable transistor for control of high power applications. It is able to switch power quickly and safely, due to its fast turn-on and turn-off times and built-in safety features such as the body diode and temperature-protection circuit. The single-substrate design allows for a simpler and more efficient current flow, enabling the STGD6NC60HT4 to be used in a wide range of applications. Due to its versatile design and reliability, this IGBT is a popular choice for power conversion and motor control projects.

The specific data is subject to PDF, and the above content is for reference

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