
Allicdata Part #: | STGD7NB120ST4-ND |
Manufacturer Part#: |
STGD7NB120ST4 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | IGBT 1200V 10A 55W DPAK |
More Detail: | IGBT 1200V 10A 55W Surface Mount DPAK |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Switching Energy: | 3.2µJ (on), 15mJ (off) |
Base Part Number: | STG*7NB |
Supplier Device Package: | DPAK |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Mounting Type: | Surface Mount |
Operating Temperature: | -- |
Test Condition: | 960V, 7A, 1 kOhm, 15V |
Td (on/off) @ 25°C: | 570ns/- |
Gate Charge: | 29nC |
Input Type: | Standard |
Series: | PowerMESH™ |
Power - Max: | 55W |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 7A |
Current - Collector Pulsed (Icm): | 20A |
Current - Collector (Ic) (Max): | 10A |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
IGBT Type: | -- |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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Introduction
The STGD7NB120ST4 is a single IGBT transistor specially designed for use in medium and high power applications. It belongs to the class of high voltage and high power transistors and is suitable for use in switching applications wherein the switching frequency is lower than 15 kHz. It is designed to provide reliable performance, low resistance, excellent transient response, and high current withstand capability. The STGD7NB120ST4 is manufactured using a proprietary process that significantly reduces the losses in power devices and enables cost-effective solutions for medium and high power applications. In this article, the application fields and working principle of the STGD7NB120ST4 are discussed.
Application Fields
The STGD7NB120ST4 is specifically designed to be used in medium and high power applications, such as induction cooking, microwave ovens, uninterruptible power supplies (UPSs), welding machines, and power tools. Its features enable it to provide excellent performance in a variety of applications. The STGD7NB120ST4 can be used in voltage classes up to 1200V, with a continuous drain current rating of up to 30A. The devices are also capable of operating at temperatures up to 175°C. The STGD7NB120ST4 transistors are designed to provide an increased controllability, which is critical for such applications. Moreover, the devices are designed to provide a very low gate-to-emitter capacitance, which allows for lower switching times and higher switching frequencies.
Working Principle
The STGD7NB120ST4 is a single IGBT transistor. An IGBT is a type of power transistor that contains two distinct electrical circuits or channels. One side (the emitter) is a power transistor, while the other side (the collector) acts like a diode. When a current is applied to the gate of an IGBT, it triggers a charge transfer between the emitter and the collector. This charge transfer causes a voltage drop across the device, resulting in a change in the current that flows through the device and a change in the device’s operating state. The STGD7NB120ST4 is designed to have a low gate-to-emitter capacitance, which allows for a quick and smooth switching of the channel’s electrical characteristics. Moreover, the device is designed to provide a low on-state resistance and a maximum blocking voltage of up to 1200V. This allows for a high efficiency of energy transfer in medium and high power applications.
Conclusion
The STGD7NB120ST4 is a single IGBT transistor specially designed for use in medium and high power applications. Its features enable it to provide excellent performance in a variety of applications, such as induction cooking, microwave ovens, uninterruptible power supplies (UPSs), welding machines, and power tools. The working principle of the STGD7NB120ST4 is based on the charge transfer between the emitter and the collector, which allows for a quick and smooth switching of its operating state. The device is designed to have a low on-state resistance, a maximum blocking voltage of up to 1200V, and a low gate-to-emitter capacitance which allows for a high efficiency of energy transfer.
The specific data is subject to PDF, and the above content is for reference
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