
Allicdata Part #: | 497-10013-2-ND |
Manufacturer Part#: |
STGD10NC60ST4 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | IGBT 600V 18A 60W DPAK |
More Detail: | IGBT 600V 18A 60W Surface Mount DPAK |
DataSheet: | ![]() |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | 0.00000 |
Series: | PowerMESH™ |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Obsolete |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | -- |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 18A |
Current - Collector Pulsed (Icm): | 25A |
Vce(on) (Max) @ Vge, Ic: | 1.65V @ 15V, 5A |
Power - Max: | 60W |
Switching Energy: | 60µJ (on), 340µJ (off) |
Input Type: | Standard |
Gate Charge: | 18nC |
Td (on/off) @ 25°C: | 19ns/160ns |
Test Condition: | 390V, 5A, 10 Ohm, 15V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Base Part Number: | STG*10NC |
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The STGD10NC60ST4 is a general-purpose IGBT power transistor which has some of the most versatile and efficient applications available. This device is a single IGBT chip that has been designed to provide extremely high switching frequencies and power handling capabilities. The chip has an operating voltage range of 30V to 780V and a temperature range of -65°C to 175°C. It also comes with low ON-resistance and a wide gain bandwidth in order to ensure efficient operation.
The most important application field of STGD10NC60ST4 is high power switching. The device has been designed to handle very large currents that are typically generated in the motors of electric cars or electronic devices. This device can also be used for any type of power electronics which require efficient, reliable and high-power switching.
The working principle of the STGD10NC60ST4 is based on a bipolar junction transistor (BJT) technology. This technology enables the device to switch both small and large currents with a high degree of efficiency and reliability. The two types of current switches in the device are the N-channel and the P-channel MOSFETs. The BJT technology also provides excellent linearity performance and the unique high current capability of the device.
The power terminals of the device are three-state which makes the device more versatile. The output voltage and current can be controlled with a single common terminal. The user can select the desired output voltage and current to operate the device. The device also has a low-dropout regulator which ensures that the output voltage and current remain constant even when the input voltage varies.
The STGD10NC60ST4 can also provide very high-temperature operations. This transistor is designed to have a temperature range of -65°C to 175°C which makes it suitable for use in extreme environmental conditions. The device also comes with a thermal flame shield which prevents any thermal damage to the chip even under heavy-duty operating conditions.
Another important application for this device is power management. The transistor can be used to accurately monitor, regulate and control the power consumption of the electronic device. This is done by appropriately programming the output voltage of the device. The total power consumption of the device can be monitored and the voltage levels can be adjusted to meet the specific needs of the device.
The STGD10NC60ST4 can also be used for high-speed switching. The device has a wide gain bandwidth which ensures fast switching of the current. The wide gain bandwidth also enables the device to switch the current with low power absorption and a high degree of efficiency. This feature makes the device ideal for high frequency, high power applications.
The STGD10NC60ST4 is one of the most efficient and versatile IGBT transistors available. This device has a wide range of applications, from electric cars to high power switching electronics. The device has excellent linearity performance and a high temperature range. The device also comes with a low-dropout regulator and a wide gain bandwidth that enables the device to operate efficiently with low power consumption at high frequencies. This makes the device an ideal choice for high power and high speed switching devices.
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