STGD18N40LZT4 Discrete Semiconductor Products

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STGD18N40LZT4 Application Field and Working Principle

STGD18N40LZT4 is a member of the single insulated-gate bipolar transistors (IGBTs) family. This device has a low on-state loss and low gate drive output losses which makes it an ideal choice for applications in switching power supplies, AC and DC motor drives, uninterruptible power supplies, renewable energy and traction drive systems.

The STGD18N40LZT4 has a Vce (collector-emitter voltage) of 600V and a current rating of 18A. The maximum junction temperature of the device is 150°C and its output capacitance is 0.18nF. The high frequency operation of the device makes it suitable for switching power supplies and AC and DC motor drives.

The STGD18N40LZT4 can be used in high-efficiency switching power supplies with switching frequencies up to 500kHz. It is also suitable for high-power motor drives and renewable energy systems. The device’s capability to withstand high surge current overshoot makes it suitable for uninterruptible power supplies and AC and DC motor drives. The STGD18N40LZT4 is also suitable for traction drives.

The STGD18N40LZT4 utilizes the characteristics of an insulated-gate bipolar transistor (IGBT) and combines it with a built-in anti-parallel diode to enable a very low on-state voltage drop, low gate driving current and high current carrying capability. The device is capable of switching loads of up to 18A at 600V and 500kHz.

The working principle of the device is based on the fact that a PN junction between n-type and p-type materials can be substituted by a metal-oxide-semiconductor (MOS) structure. The MOS structure utilizes an insulated gate to control the current flowing through the junction. When a positive voltage is applied to the gate, a current will flow through the device. The voltage at the gate determines the strength of the current flowing through the device. A positive voltage on the gate increases the current, whereas a negative voltage decreases it. The current can be completely switched off by grounding the gate.

The STGD18N40LZT4 is a power efficient device, offering improved system efficiency and reliability due to its low switching and conduction losses. Its built-in anti-parallel diode helps protect the device from overvoltage events and reverse currents. The device is also capable of very fast switching speeds, making it suitable for high-frequency applications such as motor drives.

The STGD18N40LZT4 is a versatile device that is suitable for a wide range of applications in automotive, communications and industrial markets. Its superior performance and longterm reliability make it an ideal choice for applications that require high efficiency and power density.

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