STGF10NC60HD Allicdata Electronics

STGF10NC60HD Discrete Semiconductor Products

Allicdata Part #:

STGF10NC60HD-ND

Manufacturer Part#:

STGF10NC60HD

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: IGBT 600V 9A 24W TO220FP
More Detail: IGBT 600V 9A 24W Through Hole TO-220FP
DataSheet: STGF10NC60HD datasheetSTGF10NC60HD Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 3 (168 Hours)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Switching Energy: 31.8µJ (on), 95µJ (off)
Base Part Number: STG*10NC
Supplier Device Package: TO-220FP
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 22ns
Test Condition: 390V, 5A, 10 Ohm, 15V
Td (on/off) @ 25°C: 14.2ns/72ns
Gate Charge: 19.2nC
Input Type: Standard
Series: PowerMESH™
Power - Max: 24W
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 5A
Current - Collector Pulsed (Icm): 30A
Current - Collector (Ic) (Max): 9A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The STGF10NC60HD transistor is a single-IGBT type, which is used for high-side (HS) switch applications. It is designed for use in applications such as switching power supply, industrial motor control, home appliance control and more. The transistor has a low on-state resistance and high-speed operation, meaning it can be used in applications that require fast switching speed and low power consumption.The STGF10NC60HD uses a vertical MOS structure that has been optimized to reduce on-state resistance and switching losses. The device is available in a TO-220 package and is rated for a maximum collector-emitter voltage (VCE) of 600V and a maximum collector current (IC) of 10A. The transistor also has a noise figure of -31dB, which allows for a quick and reliable switching operation.The STGF10NC60HD works by controlling the flow of current from the collector to the emitter. When a positive voltage is applied to the base of the transistor, it causes the current to flow from the collector to the emitter, resulting in a low on-state resistance. The transistor is designed to operate with a low gate-source voltage (VGS) of around 10V, so it can be used in applications that require low power consumption.The STGF10NC60HD also has a reverse-recovery time (tRR) of 100ns, which is significantly lower than other types of IGBT. This is due to the use of a vertical MOS structure and the optimized design of the transistor. The device also has a turn-on delay (tON) of 116ns, which allows for faster switching times. The switching speed of the device makes it ideal for applications that require fast switching speeds, such as motor control and switching power supplies.The STGF10NC60HD is designed for use in high-side (HS) switch applications, such as those found in industrial motor control, switching power supplies and home appliance control. It offers a low on-state resistance and low power consumption, which allows it to be used in applications that require fast switching speeds and low power consumption. The optimized design of the device also enables faster switching times and a reliable operation. Therefore, the STGF10NC60HD is a suitable choice for a variety of applications that require fast switching speeds and low power consumption.

The specific data is subject to PDF, and the above content is for reference

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