STGF15M65DF2 Discrete Semiconductor Products

Power - Max:	31W
Supplier Device Package:	TO-220FP
Package / Case:	TO-220-3 Full Pack
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Reverse Recovery Time (trr):	142ns
Test Condition:	400V, 15A, 12 Ohm, 15V
Td (on/off) @ 25°C:	24ns/93ns
Gate Charge:	45nC
Input Type:	Standard
Switching Energy:	90µJ (on), 450µJ (off)
Series:	--
Vce(on) (Max) @ Vge, Ic:	2V @ 15V, 15A
Current - Collector Pulsed (Icm):	60A
Current - Collector (Ic) (Max):	30A
Voltage - Collector Emitter Breakdown (Max):	650V
IGBT Type:	Trench Field Stop
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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The STGF15M65DF2 is a type of insulated-gate bipolar transistor (IGBT) commonly used for power electronics applications such as drives, automation, and motor control. The transistor package is that of a single IGBT, allowing for one gate terminal and two power terminals. One of the distinguishing features of this particular IGBT is a high gain of up to 8 A/W, enabling it to support high current switching applications. Additionally, due to its structure which incorporates silicon-controlled rectifier (SCR) technology, the STGF15M65DF2 is capable of extremely low On-state voltage drops and switching losses.The IGBT implements a metal-oxide-semiconductor field-effect transistor (MOSFET) as its input component, as well as a bipolar transistor as its output element. By combining these two types of transistors in a single package, this IGBT is able to act as an amplifier, allowing sensitive switching with low On-state voltage drops. This technology has become increasingly popular in the power electronics industry due to its high efficiency and tolerance to large voltage or current swings.In practice, the operation of the STGF15M65DF2 is similar to that of traditional bipolar transistors. When the gate voltage is below the turn-on threshold (VGT), the transistor remains in the Off-state, allowing no current to flow from the collector to the emitter. If the gate voltage is increased above the turn-on threshold, the transistor moves into saturation, allowing current to flow from the collector to the emitter. Once the transistor is saturated, the gate voltage may be further increased to the gate rigid voltage, which causes a latch-up effect. This effect maintains the transistor in the saturated state, even if the gate voltage is lowered.The IGBT also can be easily configured in different circuits depending on the specific application. For instance, it can be used in a parallel configuration as a high-current switch, or in series configuration as a low-current switch. Additionally, depending on the current requirements of the application, the STGF15M65DF2 can also be used in bridge configuration or with diodes in a complementary or non-complementary pair configuration.When looking at the STGF15M65DF2 application field, it is most often used in China, Europe, and the United States for industrial automation, drives, home appliances, and other power electronics applications. Additionally, since its high peak current, low On-state voltage drop, and low switching losses, it also been a popular choice for power electronic applications such as DC/DC converters, motor control, welding machines, and solar inverters.Overall, the STGF15M65DF2 is a single IGBT transistor with a high gain of up to 8 A/W that is well-suited for power electronics applications. With its combination of SCR and MOSFET technology, it is able to support both low-current and high-current switching with low On-state voltage drops and switching losses. Its application fields include industrial automation, drives, and home appliances, and it is often used in the China, Europe, and United States markets.

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