STGFW35HF60W

Series:	--
Packaging:	Tube
Lead Free Status / RoHS Status:	--
Part Status:	Obsolete
Moisture Sensitivity Level (MSL):	--
IGBT Type:	--
Voltage - Collector Emitter Breakdown (Max):	600V
Current - Collector (Ic) (Max):	36A
Current - Collector Pulsed (Icm):	150A
Vce(on) (Max) @ Vge, Ic:	2.5V @ 15V, 20A
Power - Max:	88W
Switching Energy:	290µJ (on), 185µJ (off)
Input Type:	Standard
Gate Charge:	140nC
Td (on/off) @ 25°C:	30ns/175ns
Test Condition:	400V, 20A, 10 Ohm, 15V
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-3P-3 Full Pack
Supplier Device Package:	TO-3PF
Base Part Number:	STG*35HF

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STGFW35HF60W Application Field and Working Principle
Introduction:
STGFW35HF60W is a single insulated-gate bipolar transistor (IGBT). It is an optimal choice for a wide variety of applications, from switch mode power supplies to high frequency motor drives. In this article, we will discuss the features, applications, and working principle of the STGFW35HF60W.Features and Applications:
The STGFW35HF60W is a single-channel IGBT with a high input impedance. It features an operating temperature range of -40 to 150 degrees Celsius and an isolation voltage of 1700 V. The transistor also has a low on-state resistance (Rds(on)), allowing it to support currents up to 600A. Its peak voltage rating is 850V, allowing it to be used in a variety of device designs.The STGFW35HF60W is most commonly used in power electronics applications, such as switch mode power supplies, frequency inverters, and motor drives. It can also be used to build DC-to-DC converters, rectifiers, and AC-to-DC converters. Furthermore, this transistor is well-suited for use in power systems where high power efficiency, high switching frequencies, and low harmonic content are desired.Working Principle:
In simple terms, the STGFW35HF60W works by modulating a current signal in order to switch a voltage signal on and off. When a signal is applied to the gate of the transistor, an electric field is generated between the collector and emitter. This electric field attracts current-carrying electrons, allowing a current to flow through the transistor. This current flow allows the transistor to switch a voltage signal on and off.The STGFW35HF60W operates in two main modes: the saturate or high-current mode, and the active or low-frequency mode. When the transistor is operating in the saturate mode, the collector-emitter voltage is near zero and current is allowed to flow through the device freely. In the active mode, the collector-emitter voltage is relatively high, allowing the device to control its current output.When an externally-applied voltage is used to control the transistor, it is called the gate drive circuit. This circuit supplies the gate with a controlled voltage level, allowing the transistor to switch between the two main operating modes. The gate drive circuit also prevents the transistor from becoming “saturated” and limiting its current output.Conclusion:
The STGFW35HF60W is a single insulated-gate bipolar transistor that is well-suited for use in a wide range of power electronics applications. Its high input impedance, low on-state resistance, and high peak voltage rating make it an ideal choice for devices requiring high power efficiency, high switching frequencies, and low harmonic content. By modulating a current signal in order to switch a voltage signal on and off, the transistor can be used for power conversion and switching applications. Furthermore, the transistor is externally driven by a gate drive circuit, which supplies it with a controlled voltage level and prevents it from becoming saturated.

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