
Allicdata Part #: | 497-16965-ND |
Manufacturer Part#: |
STGF4M65DF2 |
Price: | $ 0.64 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | TRENCH GATE FIELD-STOP IGBT, M S |
More Detail: | IGBT Trench Field Stop 650V 8A 23W Through Hole TO... |
DataSheet: | ![]() |
Quantity: | 1990 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | $ 0.57960 |
10 +: | $ 0.51723 |
100 +: | $ 0.40320 |
500 +: | $ 0.33307 |
1000 +: | $ 0.26295 |
Series: | M |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max): | 650V |
Current - Collector (Ic) (Max): | 8A |
Current - Collector Pulsed (Icm): | 16A |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 4A |
Power - Max: | 23W |
Switching Energy: | 40µJ (on), 136µJ (off) |
Input Type: | Standard |
Gate Charge: | 15.2nC |
Td (on/off) @ 25°C: | 12ns/86ns |
Test Condition: | 400V, 4A, 47 Ohm, 15V |
Reverse Recovery Time (trr): | 133ns |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220FP |
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STGF4M65DF2 is a single low voltage IGBT (Insulated Gate Bipolar Transistor) manufactured by Toshiba and is part of its Smart Power Module series. It is designed for use in applications where a low-voltage supply, high switching-speed, and low power losses are needed such as motor drives, power supplies, and lighting systems. In these applications, the STGF4M65DF2 is capable of controlling large currents and voltages, making it an ideal choice for industrial and automotive applications.
The STGF4M65DF2 is a four-level IGBT. A four-level IGBT is a switching device that uses two switches connected in series. These switches are known as gates and are used to control the flow of the current through the device. The first two gates are known as the upper and lower gates, while the third gate is known as the boost gate. The fourth gate is known as the floating gate, which helps to reduce the turn-on losses and improves the efficiency of the device.
The STGF4M65DF2 consists of two main components – the IGBT and the anti-parallel diode. The IGBT is a power MOSFET (metal oxide semiconductor field effect transistor) and the diode is a general-purpose diode. The device works by turning on and off the power supplied to the IGBT based on the voltage level applied to the gates. When the voltage applied to the gates is low, the IGBT turns on and the current flows through the device. Conversely, when the voltage is high, the IGBT turns off and the diode turns on, preventing the current from flowing.
The STGF4M65DF2 has a wide range of operating temperature, from -55°C to 150°C, and voltage ranges from 6.5 V to 100 V. It also has a wide range of gate voltages, from 0 V to +20 V. The maximum switching frequency for the device is 50 kHz and its maximum collector current is up to 45 A. In addition, the device also has a low on-state voltage drop of 0.42 V at a collector current of 15 A.
The STGF4M65DF2 is designed to provide improved current and voltage control. This is done by providing fast switching and current conduction, while also reducing switching losses. The device is capable of handling high currents and voltages, enabling it to be used efficiently in applications such as motor drives, power supplies and lighting systems. For these applications, the STGF4M65DF2 is an ideal choice thanks to its high speed, low on-state voltage drop, and wide temperature range.
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