STGFW30NC60V Allicdata Electronics
Allicdata Part #:

497-13104-5-ND

Manufacturer Part#:

STGFW30NC60V

Price: $ 4.70
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: IGBT 600V 36A 80W TO3PF
More Detail: IGBT 600V 36A 80W Through Hole TO-3PF
DataSheet: STGFW30NC60V datasheetSTGFW30NC60V Datasheet/PDF
Quantity: 279
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: $ 4.26510
10 +: $ 3.85434
100 +: $ 3.19095
Stock 279Can Ship Immediately
$ 4.7
Specifications
Series: PowerMESH™
Packaging: Tube 
Lead Free Status / RoHS Status: --
Part Status: Obsolete
Moisture Sensitivity Level (MSL): --
IGBT Type: --
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 36A
Current - Collector Pulsed (Icm): 100A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Power - Max: 80W
Switching Energy: 220µJ (on), 330µJ (off)
Input Type: Standard
Gate Charge: 100nC
Td (on/off) @ 25°C: 31ns/100ns
Test Condition: 390V, 20A, 3.3 Ohm, 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Supplier Device Package: TO-3PF
Description

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The STGFW30NC60V is an ultra-fast IGBT (Insulated Gate Bipolar Transistor) usually found in power amplifiers and voltage regulators for general power applications. It is one of the most widely used models of IGBTs, as it offers considerable power savings in high power applications. Through its advanced design and construction, the STGFW30NC60V can support high operating speeds, high output currents and excellent switching performance.

The IGBT is a type of transistor which combines the advantages of a MOSFET (metal-oxide semiconductor field-effect transistor) and a bipolar transistor. It provides the low gate-source threshold and high switching speed of a MOSFET with the good linearity and high-current density of a bipolar transistor. The STGFW30NC60V is a single gate IGBT, in which current flows between two insulated terminals (B1 and B2) and the gate terminal (G) is isolated from the two other terminals.

At the heart of the STGFW30NC60V is the insert gate structure. This structure uses two MOSFETs and a polysilicon layer to form a vertical three-layer structure. This creates an additional channel that improves the dynamic performance of the transistor. The four layers of the IGBT also improve its insulation capabilities, allowing for higher voltages.

In addition to its high power capabilities and high current drive, the STGFW30NC60V offers excellent switching performance. It has a wide supply voltage range of 10-60V, so it can be used in a wide variety of applications. It also has a low excess-gate charge, which increases its efficiency and reduces its power consumption.

The STGFW30NC60V is a popular IGBT used in high-power applications, such as motor Drives, UPS (uninterruptible power supply), AC-dc and DC-dc converters. Due to its low gate-source threshold, fast switching speed, and high-current density, it is ideal for use in variable speed drives, high frequency AC-DC converters and high speed DC-to-DC converters.

In conclusion, the STGFW30NC60V is an excellent single gate IGBT developed for use in power applications. Its insert gate structure and four layer construction offer superior power savings and excellent switching performance. This makes the STGFW30NC60V an ideal choice when high power and efficiency are required in high current applications.

The specific data is subject to PDF, and the above content is for reference

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