STGFW30V60DF Discrete Semiconductor Products

Series:	--
Packaging:	Tube
Lead Free Status / RoHS Status:	--
Part Status:	Active
Moisture Sensitivity Level (MSL):	--
IGBT Type:	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):	600V
Current - Collector (Ic) (Max):	60A
Current - Collector Pulsed (Icm):	120A
Vce(on) (Max) @ Vge, Ic:	2.3V @ 15V, 30A
Power - Max:	58W
Switching Energy:	383µJ (on), 233µJ (off)
Input Type:	Standard
Gate Charge:	163nC
Td (on/off) @ 25°C:	45ns/189ns
Test Condition:	400V, 30A, 10 Ohm, 15V
Reverse Recovery Time (trr):	53ns
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-3P-3 Full Pack
Supplier Device Package:	TO-3PF

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The STGFW30V60DF is a single insulated gate bipolar transistor (IGBT) manufactured by STMicroelectronics. It is a 600V device capable of delivering a continuous collector current of 30 Amps, making it ideal for use in power conversion and in power management applications. It is well suited for applications such as motor control, motor drive, solar inverter, AC motor drive and UPS systems. This article will discuss the application field and working principle of the STGFW30V60DF IGBT device.The application field of the STGFW30V60DF IGBT device is in switching and power electronic systems. Industrial lighting, solar inverters, UPS systems, AC motor control and power conversion are just a few of the areas that this device can be used in. It is also used as a switch in home appliances and consumer electronics. The device has an integrated planar structure and a low on-resistance RDS . The working principle of the STGFW30V60DF IGBT device is based on the concept of bipolar junction transistor (BJT). The device consists of two metal contacts, known as the emitter and collector. When the gate voltage is increased, the device is said to be “turned on” and the current between the collector and emitter is increased. When the gate voltage is decreased, the device is said to be “turned off’ and current between the collector and emitter is decreased. The gate voltage is used to control the amount of current flow from collector to emitter.The STGFW30V60DF IGBT device is capable of working at a very high frequency and is therefore suitable for use in high-frequency switching systems. The device has an integrated planar structure and a low on-resistance RDS which makes it suitable for use in high-power applications. The device has a large current carrying capacity and low switching losses which make it suitable for use in high power applications. In addition, it has a large current carrying capacity, low EMI and good thermal characteristics.The STGFW30V60DF IGBT device is a highly reliable device with a long service life. It has a low switching threshold voltage and a high insulation body for improved security against electric shock and current overload. The low power dissipation and wide operating temperature range make it suitable for high power applications. The device is available in multiple packages including DIP, SMD and SOT, making it easy to use and integrate into existing circuits.In summary, the STGFW30V60DF IGBT device is an ideal switching solution for power conversion and power management applications. It is a highly reliable device with a long service life and a low power dissipation. It has a wide operating temperature range and a low switching threshold voltage. The device is available in multiple packages, making it ideal for use in existing circuits. The integrated planar structure and the low on-resistance RDS make it suitable for use in high power applications.

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