STGF7H60DF

Power - Max:	24W
Supplier Device Package:	TO-220FP
Package / Case:	TO-220-3 Full Pack
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Reverse Recovery Time (trr):	136ns
Test Condition:	400V, 7A, 47 Ohm, 15V
Td (on/off) @ 25°C:	30ns/160ns
Gate Charge:	46nC
Input Type:	Standard
Switching Energy:	99µJ (on), 100µJ (off)
Series:	--
Vce(on) (Max) @ Vge, Ic:	1.95V @ 15V, 7A
Current - Collector Pulsed (Icm):	28A
Current - Collector (Ic) (Max):	14A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	Trench Field Stop
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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Introduction to STGF7H60DF

The STGF7H60DF is a single IGBT (Insulated Gate Bipolar Transistor) module designed for applications requiring high current and high power. The device features an insulated gate which can be driven by applying a voltage between the gate and the emitter and switching the device between On and OFF modes. The main benefit of using the STGF7H60DF is that it provides a low-cost solution for high power applications.

Application Field

The STGF7H60DF IGBT module is typically used in motor control applications. It can be used to drive large electric motors, such as in heavy industrial machinery, pumps and compressors, and HVAC systems. The device can also be used in high-power circuit breakers, and as a power switch in switching power supplies.

Working Principle

The STGF7H60DF works by using a semiconductor material, usually silicon, with a high resistance to electric current. The insulation between the gate and the emitter will enable the device to operate at higher temperatures and voltages. When the gate is driven, it changes the state of the internal electric field, allowing for current to flow. When the gate is not driven, the internal electric field of the STGF7H60DF is switched off, and the device will turn off.In order to control the amount of current that flows through the device, the gate voltage must be varied. The voltage applied at the gate is known as the gate control voltage. The gate control voltage can be adjusted to increase or decrease the amount of electric current through the device. This can then be used to control the power output of electric motors, or the on/off switching of high-power electric circuits.

Conclusion

The STGF7H60DF single IGBT module provides a low-cost solution for high-power applications. The device works by using a high-resistance semiconductor material, with an insulated gate which can be driven by applying a voltage between the gate and emitter, and switching the device between On and OFF modes. The device can be used to drive large electric motors, control circuit breakers, and as a power switch in switching power supplies. The gate control voltage can be adjusted to increase or decrease the amount of electric current through the device, making it a versatile and efficient solution for many applications.

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