STGF20V60DF Allicdata Electronics

STGF20V60DF Discrete Semiconductor Products

Allicdata Part #:

STGF20V60DF-ND

Manufacturer Part#:

STGF20V60DF

Price: $ 0.78
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: IGBT BIPO 600V 20A TO-220
More Detail: IGBT
DataSheet: STGF20V60DF datasheetSTGF20V60DF Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1000 +: $ 0.71171
Stock 1000Can Ship Immediately
$ 0.78
Specifications
Series: --
Part Status: Active
Lead Free Status / RoHS Status: --
Moisture Sensitivity Level (MSL): --
Description

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Stgf20v60df is a type of Insulated Gate Bipolar Transistor (IGBT). It is a single type of device and is the most commonly used type of IGBT. The IGBT combines the advantages of both a linear transistor and a MOSFET (Metal Oxide Semiconductor Field Effect Transistor). When driven, the device can easily switch from OFF to ON states and vice versa without the need for external circuitry. This makes it a much more efficient and reliable device as compared to other transistors.

Stgf20v60df has a number of applications in various fields, including industrial, automotive, and consumer electronics. Common uses include power control, high-speed switching, rectification, and inverter systems. It is also used in the design of power converters, power-line networking, and bus controllers. Stgf20v60df is typically used in applications that require high current or voltage ratings and that operate over wide temperature ranges. It is also commonly used for photovoltaic cells and for motor drive circuits.

Stgf20v60df’s working principle is based on the principle of capacitance-voltage (CV) control. In this approach, the IGBT is driven through a gate voltage and its capacitance is controlled by a voltage source. The IGBT’s voltage is then regulated by adjusting the gate voltage. This allows for precise control of current and power consumption. The IGBT also operates on the forward conduction mode, in which the device allows current to flow through it when a forward voltage is applied. This method is often more efficient and reliable than traditional linear MOSFET approaches.

The working principle of Stgf20v60df is based on a controlled blocking voltage (Vbb) and a desired forward blocking voltage (Vfb). The Vbb is the maximum voltage that can be applied before the device blocks current from flowing. The Vfb defines the desired threshold of the forward current that can flow through the device. By combining both voltage controls, the power flow through the device can be controlled very precisely. This allows high efficiency and reliability, in addition to a high switching frequency.

Stgf20v60df’s high-speed switching, strength, and wide temperature range operation make it a popular choice for applications requiring very high reliability and precision. The device is also highly efficient in providing very high power and low noise. With its advanced features, Stgf20v60df is a great choice for applications requiring very high currents and voltages, as well as applications requiring very low current and voltage thresholds. The device is also well suited for use in photovoltaic cells and motor control circuits.

The specific data is subject to PDF, and the above content is for reference

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