STGFW20V60F Allicdata Electronics
Allicdata Part #:

497-13954-5-ND

Manufacturer Part#:

STGFW20V60F

Price: $ 2.22
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: IGBT 600V 40A 52W TO3PF
More Detail: IGBT Trench Field Stop 600V 40A 52W Through Hole T...
DataSheet: STGFW20V60F datasheetSTGFW20V60F Datasheet/PDF
Quantity: 309
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: $ 2.01600
10 +: $ 1.81062
100 +: $ 1.48340
500 +: $ 1.26281
1000 +: $ 1.06502
Stock 309Can Ship Immediately
$ 2.22
Specifications
Series: --
Packaging: Tube 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 40A
Current - Collector Pulsed (Icm): 80A
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Power - Max: 52W
Switching Energy: 200µJ (on), 130µJ (off)
Input Type: Standard
Gate Charge: 116nC
Td (on/off) @ 25°C: 38ns/149ns
Test Condition: 400V, 20A, 15V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Supplier Device Package: TO-3PF
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The STGFW20V60F is a single IGBT module made by STMicroelectronics. This device is designed for use in various applications such as drives for electric appliances, DC-DC converters, and various motor control applications. The device can manage up to 600A of current with a blocking voltage of up to 20V. The device is a three-terminal device, with a source (S), a gate (G) and a ground (GND) terminal.

The STGFW20V60F is based on the Insulated Gate Bipolar Transistor (IGBT) technology. An IGBT is a type of power semiconductor device that combines the characteristics of both a metal-oxide semiconductor field-effect transistor (MOSFET) and a bipolar junction transistor (BJT). This makes it suitable for a variety of high-power applications.

The working principle of an IGBT involves the use of a MOSFET structure as the input stage of the device. A voltage applied to the gate terminal controls the current flowing through the device, in a similar fashion to a MOSFET. Unlike a MOSFET, however, an IGBT has an isolated collector–base junction, making it less susceptible to breakdown due to high temperatures.

The STGFW20V60F is a very versatile device and is suitable for a variety of applications. It can be used in applications such as motor drives, photovoltaic inverters, welding equipment, uninterruptible power supplies (UPS), and various other power electronics systems. The device also features various designed-in protection features to ensure safety and improve efficiency.

Due to its high current handling capabilities, the STGFW20V60F is suitable for applications with high power requirements. It can be used to control high power motors, such as in industrial machines, providing precise control and high efficiency. The device can also be used in photovoltaic inverters, allowing for efficient conversion of solar energy into electricity.

The device also offers various thermal protection features, such as over-temperature protection and over-current protection. The over-temperature protection feature helps to prevent any damage due to overheating, while the over-current protection feature helps to protect the device from any overloads or short circuits. Overall, the device offers a reliable and robust solution for high power applications.

In conclusion, the STGFW20V60F is a single IGBT module from STMicroelectronics that is suitable for a variety of applications. It offers very high current handling capabilities, various designed-in protection features, and is ideal for high power applications.

The specific data is subject to PDF, and the above content is for reference

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