Allicdata Part #: | STGF30V60DF-ND |
Manufacturer Part#: |
STGF30V60DF |
Price: | $ 1.01 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | IGBT BIPO 600V 30A TO-220 |
More Detail: | IGBT |
DataSheet: | STGF30V60DF Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1000 +: | $ 0.91122 |
Series: | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Moisture Sensitivity Level (MSL): | -- |
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STGF30V60DF IGBT is one of the most popular IGBTs in the industry. It is a single-channel, non-isolated gate turn-off (GTO) transistor, and is widely used in high-power switching and power conversion applications. In this article, we will discuss the application fields of the STGF30V60DF and its working principle.
Applications of STGF30V60DF IGBT
The STGF30V60DF IGBT is used in a variety of applications, including in high power switching, solar & wind energy inverters, solar & wind power plants, industrial drives and motor control, traction systems, and UPS systems. It is also used in electric vehicle (EV) and hybrid electric vehicle (HEV) drivetrains, and aerospace and military applications.
The STGF30V60DF IGBT has excellent thermal resistance, heat dissipation, and current capacity, making it an ideal solution for applications with large currents and frequent switching. It also has a low switching speed, allowing for a low switching loss.
Working Principle of STGF30V60DF IGBT
The STGF30V60DF IGBT is a non-isolated gate turn-off (GTO) transistor. It uses a combination of bipolar and field-effect transistors to achieve its function. The intrinsic strength of the bipolar devices and gate drive circuit to turn the device on and off quickly and efficiently makes it an ideal choice for high power switching applications.
When the gate terminal of the STGF30V60DF is positive, a small positive voltage will create a flow of electrons and a small current will flow between the source and drain terminals. This current flow will create a weak collector-emitter voltage (VCE). When the gate voltage is increased to the point where it is greater than the VCE, the device will turn on, allowing a larger current to flow between the source and drain terminals. This increase in current will generate a large voltage drop across the device, creating a path between the collector and emitter.
When the gate voltage is reduced to 0V, the device will turn off. This is done by allowing the current flow between the source and drain terminals to fall back to the small current level at the start of the turn-on process. The device will then shut off, preventing any conduction between the collector-emitter terminals.
The STGF30V60DF is designed to turn on and off very quickly, allowing for high frequency switching applications. It is also designed to handle large currents and its internal characteristics offer excellent thermal resistance, making it a great choice for applications requiring frequent switching or large currents.
Conclusion
The STGF30V60DF is a common and popular IGBT device, used in a variety of applications. Its combination of solid power handling, low switching speed, and good thermal characteristics make it an ideal choice for high power switching applications. Its ability to quickly turn on and off also makes it an excellent choice for high frequency switching applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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STGF35HF60W | STMicroelect... | 1.95 $ | 875 | IGBT 600V 19A 40W TO220FP... |
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STGFW30H65FB | STMicroelect... | 2.37 $ | 291 | IGBT 650V 60A 58W TO3PFIG... |
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