STGP20V60DF

Power - Max:	167W
Supplier Device Package:	TO-220
Package / Case:	TO-220-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Reverse Recovery Time (trr):	40ns
Test Condition:	400V, 20A, 15V
Td (on/off) @ 25°C:	38ns/149ns
Gate Charge:	116nC
Input Type:	Standard
Switching Energy:	200µJ (on), 130µJ (off)
Series:	--
Vce(on) (Max) @ Vge, Ic:	2.2V @ 15V, 20A
Current - Collector Pulsed (Icm):	80A
Current - Collector (Ic) (Max):	40A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	Trench Field Stop
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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Overview

The STGP20V60DF is a type of single IGBT (Insulated Gate Bipolar Transistor) produced by Sanyo Semiconductor. It is used in a wide range of applications spanning from consumer electronics to industrial applications. The IGBT combines the advantages of a MOSFET (Metal-Oxide-Semiconductor Field-Effect-Transistor) and a BJT (Bipolar Junction Transistor) for improved switching performance along with fast switching speeds.

Applications

The most common application of the STGP20V60DF is to be used as a motor drive in Motor Control. It can be used to control the speed, direction, and torque of motors efficiently. Other applications include UPS (Uninterruptible Power Supply) systems, solar panel applications, and DC-DC converters.

Features & Benefits

The STGP20V60DF has a number of features and benefits that make it a great choice for many applications. This IGBT has a very low on-state voltage drop, which helps to reduce energy costs. It also has a fast switching speed, which allows for better control over motors. Additionally, its high frequency switching capabilities make it an ideal choice for UPS systems and solar applications. Finally, its high temperature tolerance allows for better reliability and performance over a wide range of temperatures.

Working Principle

The operation of the STGP20V60DF follows a classical IGBT structure. The basic structure consists of an IGBT base, or collector, an insulated gate, and an emitter. When an electric known as the gate voltage is applied, the insulation layer enables charge carriers to flow from the base to the emitter. These charges then create a channel of current, allowing for the flow of electricity through the IGBT.The main advantages of IGBTs over other power transistors is that they can carry more current and voltage due to the insulation layer. This insulation layer allows the charge carriers to flow faster, enabling more power to be transmitted. Additionally, IGBTs are more reliable and can handle higher temperatures than other power transistors.

Conclusion

The STGP20V60DF is an ideal choice for a wide range of applications including motor drives, UPS systems, solar panels, and DC-DC converters. Its features such as low on-state voltage drop, fast switching speed, high frequency switching capability, and high temperature tolerance make it a great choice for many applications. Its classical structure and working principle allow it to be used in many applications.

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