STGP3NB60FD

Switching Energy:	125µJ (off)
Base Part Number:	STG*3NB
Supplier Device Package:	TO-220AB
Package / Case:	TO-220-3
Mounting Type:	Through Hole
Operating Temperature:	150°C (TJ)
Reverse Recovery Time (trr):	45ns
Test Condition:	480V, 3A, 10 Ohm, 15V
Td (on/off) @ 25°C:	12.5ns/105ns
Gate Charge:	16nC
Input Type:	Standard
Series:	PowerMESH™
Power - Max:	68W
Vce(on) (Max) @ Vge, Ic:	2.4V @ 15V, 3A
Current - Collector Pulsed (Icm):	24A
Current - Collector (Ic) (Max):	6A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	--
Moisture Sensitivity Level (MSL):	--
Part Status:	Obsolete
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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Introduction

The STGP3NB60FD is a planar V-groove Insulated Gate Bipolar Transistor (IGBT) of the latest generation. It can operate with higher efficiency and superior thermal performance at lower switching losses. This transistor is manufactured by STMicroelectronics, who specializes in high power semiconductors.

Application Field

The STGP3NB60FD is designed for high voltage applications in inverters, motor drives, switch mode power supplies, and uninterruptible power supplies. It has a very excellent static and dynamic performance which makes it ideal for high power circuits. It features excellent dv/dt immunity, good switching performance, and is increasingly used in choppy motor drives. In addition, the STGP3NB60FD is capable of operating at high temperatures and frequencies while exhibiting high current density and low rds(on).

Working Principle

The STGP3NB60FD is an Insulated Gate Bipolar Transistor (IGBT). It is a switching semiconductor device that combines the features of a native transistor and a gate field-effect transistor. In an IGBT, the gate terminal is insulated from the semiconductor substrate, and current does not flow between the two. The gate signal, applied to the gate terminal, creates an electric field that modulates the majority carrier concentration on the semiconductor substrate. The STGP3NB60FD has a very high breakdown voltage of 600V for the collector-emitter junction and 1000V for the gate-emitter junction. This ensures that the device can handle high voltage surges without overloading. The STGP3NB60FD also has a low on-state voltage drop in the range of 0.5V-1V across the collector-emitter terminals. This low voltage drop allows the transistor to operate with greater efficiency and reduced losses. The STGP3NB60FD is equipped with an advanced embedded protection system to protect against overheating and over-current conditions. It also features a bidirectional integrated anti-saturation control which prevents an internal short circuit between the emitter terminal. This control is particularly useful when the IGBT is used in motor drives and other power converters because it prevents the IGBT from being damaged in case of an overcurrent situation.

Conclusion

The STGP3NB60FD is an advanced IGBT which offers high power efficiency, superior thermal performance and lower switch losses. It is designed for use in high voltage applications like inverters, motor drives and power supplies, and is capable of operating at high temperatures and frequencies. The STGP3NB60FD is equipped with an advanced embedded protection system and an anti-saturation control that make the transistor more reliable and robust in the long run.

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