STGP3NB60KD Discrete Semiconductor Products

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STGP3NB60KD Application Field and Working Principle

Insulated Gate Bipolar Transistors (IGBTs) are solid-state devices that in many aspects, behave like conventional bipolar power transistors. They are designed to deliver superior performance over traditional bipolar transistors in applications that involve high-power switching, including industrial motor drives, UPS systems, power converters, welding equipment, and electric vehicle systems. Single IGBTs like the STGP3NB60KD combine the fast switching characteristics of MOSFET transistors with the high-current rating of bipolar transistors.

In spite of its relatively small size, the STGP3NB60KD is a 600V NPT IGBT that can handle a maximum collector current rating of 28A in an TO-220 package. Although IGBTs are often rated for much higher voltages and currents, this particular device is best suited for medium-power applications that require a reliable power switching solution. This makes the STGP3NB60KD the ideal choice for applications such as white goods, smart-meter systems, uninterruptible power supplies, and power factor correction circuits.

Working Principle

The STGP3NB60KD is an IGBT, which is basically a hybrid between a MOSFET (metal-oxide-semiconductor field-effect transistor) and a bipolar transistor. A MOSFET has a gate terminal which controls the operation of the device, much the same way as a valve on a pipe controls the flow of water. By properly controlling the gates, a MOSFET can be used to switch high currents with very low power dissipation.

A bipolar transistor, on the other hand, works a bit differently. It uses two transistors—one in the P-type (positive) and one in the N-type (negative) material—and two terminals, base and collector. The base voltage is adjusted to achieve the desired collector current. The "insulated gate" in an IGBT is basically a MOSFET gate, while the integrated MOSFET and bipolar transistor design allows it to function as both a switch and an amplifier.

In the STGP3NB60KD, the insulated gate positively charges the P-type layer, forcing the electrons to flow through the N-type channel. This causes the voltage between the gate and the emitter to drop, effectively turning the transistor "on." The gate-emitter voltage is directly proportional to the collector current, so by varying the gate voltage, it is possible to control the current in the collector.

Furthermore, the STGP3NB60KD is designed to be immune to short-term "shoot-through" currents which can occur during switching transitions. In addition, its integrated clamping feature prevents the voltage at the gate from exceeding its supply voltage, helping to protect it from damage caused by transient overvoltage events. This allows the STGP3NB60KD to be used in applications where high-surge currents are likely to occur.

Overview

The STGP3NB60KD IGBT is designed for medium-power applications that require a reliable switching solution. As compared to traditional bipolar transistors, IGBTs like the STGP3NB60KD offer faster switching speed, better efficiency, and greater immunity to short-term shoot-through currents. With a 600V maximum collector current rating and a maximum collector current rating of 28A, the STGP3NB60KD is the ideal choice for applications involving white goods, smart-meters systems, uninterruptible power supplies, and power factor correction circuits.

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