STGP7NB60KD

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IGBT or insulated gate bipolar transistor is one of the most commonly used power devices in electronics. The STGP7NB60KD is a single IGBT device, manufactured by STMicroelectronics for use in high-power applications.

The STGP7NB60KD IGBT is a specific type of transistor that combines the conductivity of a bipolar transistor with the high-speed switching of an insulated gate FET (Field Effect Transistor). It has a triple diffused P-type substrate, and is specifically designed to operate in high voltage motor drives applications, providing a large current carrying capacity and fast switching speed.

The STGP7NB60KD is considered a single IGBT, meaning it contains a single transistor capable of carrying a high-current load. Its working principle is based on a combination of bipolar and insulated gate FET structures. In its operation, the insulated gate FET section acts as a voltage-controlled switch, while the bipolar section, activated by the gate current, handles the on-state current.

The STGP7NB60KD IGBT is especially suited for applications that require a high-power operating current, such as high-voltage motor drives, welders and power supplies. It is distinguished by its high current carrying capacity, low on-state voltage drop, low gate threshold voltage and fast switching speed. These features make it particularly suitable for signal-controlled switching in various high power applications.

The STGP7NB60KD IGBT is composed of a high voltage gate buffer and ESD protection, as well as a package substrate. It has a total load current of 120A and a voltage breakdown of 600V. The gate threshold voltage is 10V, while the on-state current drop is only 0.6V at 120A load current. Its switching frequency is 40kHz.

In summary, the STGP7NB60KD IGBT is a single insulated gate bipolar transistor, designed for applications that require high current and fast switching operation. It is a reliable and powerful device, capable of satisfying all demands from high-power applications.

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