STGP7NB60HD Discrete Semiconductor Products

Switching Energy:	85µJ (off)
Base Part Number:	STG*7NB
Supplier Device Package:	TO-220AB
Package / Case:	TO-220-3
Mounting Type:	Through Hole
Operating Temperature:	150°C (TJ)
Reverse Recovery Time (trr):	100ns
Test Condition:	480V, 7A, 10 Ohm, 15V
Td (on/off) @ 25°C:	15ns/75ns
Gate Charge:	42nC
Input Type:	Standard
Series:	PowerMESH™
Power - Max:	80W
Vce(on) (Max) @ Vge, Ic:	2.8V @ 15V, 7A
Current - Collector Pulsed (Icm):	56A
Current - Collector (Ic) (Max):	14A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	--
Moisture Sensitivity Level (MSL):	--
Part Status:	Obsolete
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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The STGP7NB60HD is an Insulated Gate Bipolar Transistor that is designed to be used in the power electronics industry. This IGBT is a single part, meaning that it has only one operating channel and is designed to handle a maximum voltage of 600 volts. It is also capable of outputting up to 7 amps of current.The STGP7NB60HD is most commonly used in hybrid electric vehicles, electric railway systems and other high power applications. It has very high surge current capabilities, making it ideal for applications where high current inrush is required. Additionally, it has very low on-state power loss and provides a very high efficiency in these applications.The working principle of the STGP7NB60HD is a combination of both bipolar and field effect transistor (FET) technologies. The main advantages of the bipolar technology are its low on-state power losses and its low gate turn-on voltage threshold. This allows for a higher switching frequency and a lower switching time, thereby increasing the efficiency of the system. The FET technology, on the other hand, provides improved gate control, making it very suitable for applications requiring high switching speeds.In addition to its excellent switching characteristics, the STGP7NB60HD also has a very low gate input capacitance. This is especially beneficial in applications where a high switching frequency is required as it allows for a higher frequency response with less gate drive current. It also has a low on-state gate voltage drop, or Vgs(th). This provides improved efficiency and power savings compared to other IGBTs.In conclusion, the STGP7NB60HD is an ideal choice for applications where a high switching speed is required. Its combination of bipolar and FET technologies allows for high efficiencies and excellent surge current capabilities. It also has a low gate input capacitance and a low Vgs(th) which makes it very suitable for electric railway systems and hybrid electric vehicles.

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