STGP30H65F

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The STGP30H65F is part of STMicroelectronics’ SuperFET III series of strongly driven integrated gate bipolar transistors (IGBTs). This series of devices provides increased power cycling performance and improved conduction loss ratings for demanding industrial motor control, welding and uninterruptible power supply (UPS) applications.

The STGP30H65F is a single-die IGBT designed to offer low power dissipation, low conduction losses and improved di/dt ratings compared to conventional designs. The low gate voltage needed to turn the device on and the overall package design also enable the STGP30H65F to support faster switching speeds than many other IGBTs.

STGP30H65F is a single IGBT with a collector-emitter voltage rating of 650V. The device features low gate- collector shorts, high junction temperature rating and low internal gate-emitter resistance. This combination of features allows the STGP30H65F to switch either AC or DC current with minimal power loss. The device can operate with in a junction temperature range of -55 to 175 degrees Celsius.

In addition to its electrical performance characteristics, the STGP30H65F also offers robust physical characteristics for a wide range of application fields. The package measures 17.4 mm x 10.4 mm x 4.7 mm, and is available in multiple lead configurations as well as multiple lead spacing. The STGP30H65F also features an insulation system consisting of a Nylon PPS-Epoxy package and a single gate-emitter resistor that is encapsulated within the die.

The STGP30H65F can be used in a wide range of applications. One prominent application where the STGP30H65F is used extensively is motor control and in particular, high-power adjustable-speed drives. The device’s low gate drive requirements and robust physical design make it ideal for applications requiring frequent starts and stops, wide temperature operations and high power cycling. The device is also well suited for use in welding and UPS applications, in particular for switch-mode power supplies (SMPS) as it is capable of block current up to 30A.

In terms of operation, the STGP30H65F can be triggered via the gate terminal. The device has a drain-source voltage of 650 volts and a gate-source voltage range between 5 and 20 volts. This makes it possible for the device to conduct current in both directions. Furthermore, the device has a maximum power dissipation of 750 cm2 free air, with a di/dt value of 50 A/ms and a maximum junction temperature of 175 degrees Celsius. When using the STGP30H65F, the proper timing pulses must be applied to the gate terminal in order to maintain the proper device switching speed and to prevent over-heating.

In conclusion, the STGP30H65F is an ideal solution for motor control applications, welding and UPS applications. Offering features such as low conduction losses, low gate voltage, robust package and insulation system, an integrated gate-emitter resistor, and a high temperature rating, it is the perfect choice for users who are dealing with frequent start and stops, wide temperature ranges and high power cycling. The device supports high power current block up to 30A and is capable of switching current in both directions.

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