STGP35N35LZ

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Introduction

The STGP35N35LZ is a 350V N-channel electric field effect transistor (EFT) hovered MOSFET produced by Infineon offerings. It has impressive switching characteristics, offering short turn-on and turn-off time, fast switching time as well as superb dV/dt and dI/dt capability. This transistor has wide application in renewable energy, motor control, line driver, motor control and other power switching applications. This paper will explore its application fields, working principle and its advantages over other power semiconductors.

Application Fields of STGP35N35LZ

It is suitable for power switching applications, renewable energy such as wind turbines, solar power converters and motor control. Thanks to its low on-resistance (1.75Ω typical) and low gate-drain leakage current, it can deliver a better power efficiency and a higher power conversion rate. It is also used in applications requiring high switching frequency such as line driver, motor control, and other power switching applications. Infineon\'s energy management family of products features a broad range of integrated power semiconductor solutions such as motor driver ICs, power conversion controllers, current sensors, and power switches.

Working Principle of STGP35N35LZ

The STGP35N35LZ adopts N-Channel electric field effect transistors (EFTs). When the current passes from source to drain, it is always been blocked by the gate-oxide layer. To reduce the gate-oxide layer\'s resistance and allow current to pass through, the gate voltage must be increased to a certain level. This voltage is known as the threshold voltage. As long as the supply voltage is greater than the threshold voltage, the current will pass from source to drain. In general, the device has two operation modes: enhancement mode and depletion mode. In enhancement mode, a positive voltage applied to the gate electrode increases the conductivity between the source and drain electrodes; while in depletion mode, a negative voltage applied to the gate electrode decreases the conductivity. STGP35N35LZ also adopts a special design which keeps the gate-to-channel voltage constant, and thus provides a greater level of protection against EMI and electromagnetic interference.

Advantages of STGP35N35LZ

The STGP35N35LZ has some features that give it an edge over traditional power semiconductor devices. Firstly, it has low gate-drain leakage current, which ensures reliable switching performance and longer life. Secondly, it exhibits excellent dv/dt and di/dt capability, meaning that it can tolerate higher switching frequency applications. Furthermore, it has a low power loss characteristic and offers a better power efficiency and a higher power conversion rate than conventional power semiconductor devices. This makes it an ideal choice for high-power applications.

Conclusion

The STGP35N35LZ is a 350V N-channel electric field effect transistor manufactured by Infineon and is suitable for power switching applications, renewable energy, line driver, motor control, and other power switching applications. Its features include low gate-drain leakage current, excellent dv/dt and di/dt capability and a low power loss characteristic. Therefore, it provides better power efficiency and a higher power conversion rate than traditional power semiconductor devices.

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