STGP6M65DF2 Allicdata Electronics
Allicdata Part #:

497-16967-ND

Manufacturer Part#:

STGP6M65DF2

Price: $ 0.82
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: TRENCH GATE FIELD-STOP IGBT M SE
More Detail: IGBT Trench Field Stop 650V 12A 88W Through Hole T...
DataSheet: STGP6M65DF2 datasheetSTGP6M65DF2 Datasheet/PDF
Quantity: 1862
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: $ 0.74340
10 +: $ 0.66339
100 +: $ 0.51729
500 +: $ 0.42733
1000 +: $ 0.33737
Stock 1862Can Ship Immediately
$ 0.82
Specifications
Series: M
Packaging: Tube 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 12A
Current - Collector Pulsed (Icm): 24A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Power - Max: 88W
Switching Energy: 40µJ (on), 136µJ (off)
Input Type: Standard
Gate Charge: 21.2nC
Td (on/off) @ 25°C: 12ns/86ns
Test Condition: 400V, 6A, 22 Ohm, 15V
Reverse Recovery Time (trr): 140ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220
Description

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The STGP6M65DF2 is a high voltage, high current, and fast switching N-channel integrated gate bipolar transistor (IGBT). It is designed primarily for switching applications and can be used in industrial, home automation, and robotics applications. It has a low gate-source to threshold voltage, which allows for a low gate drive voltage and thus makes it suitable for applications in which power efficiency is critical. Additionally, it has a low on-state resistance, compared to other IGBTs, giving it an excellent performance at high frequency switching applications.

The STGP6M65DF2 is a 6 amp device, which can handle currents up to 100V. It also has a drain-source breakdown voltage of 650V. It works according to the principle of voltage, with the gate triggering a conduction path between the collector and the emitter. Its construction consists of a silicon base structure with superimposed N-channel JFET (Junction Field Effect Transistor) and power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) structures. This combination of transistor structures allows for the IGBT to have high forward blocking and low conduction losses, which makes it highly suitable for applications in which high efficiency is needed.

The performance of the STGP6M65DF2 is highly optimized for fast switching applications. It features a very low gate charge and reverse recovery charge. This allows for a faster switching time, which is important in applications where higher speeds are needed. Additionally, its small size and low weight makes it suitable for portable and lightweight applications. It also features a high current carrying capacity and low on-state losses.

The STGP6M65DF2 has numerous applications due to its high performance and low cost. It can be used in a variety of industrial, home automation, and robotics applications. Its switching performance makes it ideal for power supplies, inverter circuits, solid state relays, motor drives, and power semiconductor switches. Its low on-state losses make it suitable for applications in which the power efficiency is important. It is also an excellent choice for lighting control systems, as it has the capability to switch very fast.

In conclusion, the STGP6M65DF2 is an ideal choice for applications in which fast switching speed, high current carrying capacity, and low losses are required. Its low cost and high performance make it a highly suitable option for industrial, home automation, and robotics applications. Additionally, its low power consumption and small size make it ideal for portable and lightweight applications. The IGBT can be used in a variety of applications, from power supplies and motor drives to robotics and solid state relays.

The specific data is subject to PDF, and the above content is for reference

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