STGP12NB60K Allicdata Electronics
Allicdata Part #:

STGP12NB60K-ND

Manufacturer Part#:

STGP12NB60K

Price: $ 0.85
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: IGBT 600V 30A 125W TO220
More Detail: IGBT 600V 30A 125W Through Hole TO-220AB
DataSheet: STGP12NB60K datasheetSTGP12NB60K Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1000 +: $ 0.77694
Stock 1000Can Ship Immediately
$ 0.85
Specifications
Power - Max: 125W
Base Part Number: STG*12NB
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Test Condition: 480V, 12A, 10 Ohm, 15V
Td (on/off) @ 25°C: 25ns/96ns
Gate Charge: 54nC
Input Type: Standard
Switching Energy: 258µJ (off)
Series: PowerMESH™
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 12A
Current - Collector Pulsed (Icm): 60A
Current - Collector (Ic) (Max): 30A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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STGP12NB60K is an Insulated Gate Bipolar Transistor (IGBT) that is used in a variety of applications. It is a single, low voltage IGBT, making it ideal for low-speed, low-frequency, low power applications. As such, it is commonly used in consumer products such as in home appliances, consumer electronics, and automobiles. It is also frequently utilizedindustrial applications, such as in robotics, semiconductor manufacturing, factory automation, and for providing stable contact potential for UPS systems.

This IGBT consists of an N-channel semiconductor and a P-channel semiconductor with a common Gate connection between them. This allows the device to be controlled using an electric charge. By applying a voltage or current to the Gate terminal, current can flow from the Collector to the Emitter, allowing the IGBT to be controlled. The device\'s output current is determined by the voltage and current applied to the Gate terminal.

The STGP12NB60K IGBT is capable of operating at high frequencies, which is a benefit in applications in which switching speed is important. It also has a low on-state voltage drop that minimizes power loss during use. It is rated to handle a maximum operating temperature of 150 °C and also has increased robustness due to its hard switching capability.

The STGP12NB60K IGBT is designed for use in applications requiring improved commutation capability, such as motor drives, welding applications, and electric vehicle inverters. It also has advanced Resonant DC Link (RDL) protection circuit built-in, which helps to protect the IGBT from voltage overshoot and undershoot, as well as current surge due to switching noise. This circuit also helps to reduce power loss during use. In addition to this, its high current carrying capability helps to increase efficiency and the system\'s overall power output.

Overall, the STGP12NB60K is a single, low voltage IGBT that is designed to help reduce losses during operation. As a result, it can help to improve efficiency and help increase the power output of a system. It also has a built-in RDL protection circuit that helps to protect the IGBT from voltage and current surge, as well as switching noise. This makes it an ideal choice for applications requiring high reliability and durability.

The specific data is subject to PDF, and the above content is for reference

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