STGP19NC60WD Allicdata Electronics

STGP19NC60WD Discrete Semiconductor Products

Allicdata Part #:

497-6027-5-ND

Manufacturer Part#:

STGP19NC60WD

Price: $ 0.76
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: IGBT 600V 40A 125W TO220
More Detail: IGBT 600V 40A 125W Through Hole TO-220AB
DataSheet: STGP19NC60WD datasheetSTGP19NC60WD Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 0.76000
10 +: $ 0.73720
100 +: $ 0.72200
1000 +: $ 0.70680
10000 +: $ 0.68400
Stock 1000Can Ship Immediately
$ 0.76
Specifications
Switching Energy: 81µJ (on), 125µJ (off)
Base Part Number: STG*19NC
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 31ns
Test Condition: 390V, 12A, 10 Ohm, 15V
Td (on/off) @ 25°C: 25ns/90ns
Gate Charge: 53nC
Input Type: Standard
Series: PowerMESH™
Power - Max: 125W
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A
Current - Collector (Ic) (Max): 40A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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STGP19NC60WD is a type of insulated-gate bipolar transistor (IGBT) that is designed for high power switching applications. It is an N-Channel device that has been optimized for low on-state voltage drop and low gate drive power consumption. The STGP19NC60WD is produced with the latest generation of IGBTs and is ideal for DC-DC conversion, high frequency switching, and high voltage power switching applications.

The STGP19NC60WD is a single-channel device that uses high operating temperature metal-oxide-semiconductor (MOS) technology. It is rated for up to 600V and 78A, with a maximum steady-state current rating of 80A. The device features a low on-state voltage drop of less than 1V, enabling lower power losses and higher efficiency. The maximum operating junction temperature is rated at 175°C, allowing for a wide range of applications in both automotive and industrial applications.

The STGP19NC60WD has been designed for low switching power dissipation, high speed switching, and low turn-on and turn-off times. It also features a high input impedance and a low gate emission current. The device has been designed to have a low turn-on and turn-off time, allowing for reduced switching losses and improved system efficiency.

The working principle of the STGP19NC60WD is based on the transfer of charge carriers between the collector and the emitter. When the gate voltage is applied, it creates an electric field that attracts current carrier electrons from the emitter. When the current carriers travel from the emitter to the collector, it creates a voltage drop across the collector-emitter junction. This voltage drop creates a current flow from the collector to the emitter. As the gate voltage is decreased, the current carriers are repelled back towards the emitter and the current flow stops.

The STGP19NC60WD is an ideal choice for high power switching applications. It provides low on-state voltage drop, fast switching times, high input impedance, and low gate drive power consumption. It is rated to perform in both automotive and industrial applications, with a maximum operating temperature of 175°C. Its high switching power dissipation and low turn-on and turn-off time makes it ideal for DC-DC conversion, high frequency switching, and high voltage power switching applications.

The specific data is subject to PDF, and the above content is for reference

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