STGP12NB60KD Discrete Semiconductor Products

Switching Energy:	258µJ (off)
Base Part Number:	STG*12NB
Supplier Device Package:	TO-220AB
Package / Case:	TO-220-3
Mounting Type:	Through Hole
Operating Temperature:	150°C (TJ)
Reverse Recovery Time (trr):	80ns
Test Condition:	480V, 12A, 10 Ohm, 15V
Td (on/off) @ 25°C:	25ns/96ns
Gate Charge:	54nC
Input Type:	Standard
Series:	PowerMESH™
Power - Max:	125W
Vce(on) (Max) @ Vge, Ic:	2.8V @ 15V, 12A
Current - Collector Pulsed (Icm):	60A
Current - Collector (Ic) (Max):	30A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	--
Moisture Sensitivity Level (MSL):	--
Part Status:	Obsolete
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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STGP12NB60KD Application Field and Working PrincipleThe STGP12NB60KD is a type of IGBT (Insulated Gate Bipolar Transistor) commonly used in power control and power switching applications. An IGBT is a three-terminal device consisting of two states, an \'on\' state and an \'off\' state. It is a combination of a MOSFET (metal oxide semiconductor field-effect transistor) and a PAR (parallel connection of bipolar transistors). In its off state, the STGP12NB60KD will block current from passing through and in its on state, will allow current to pass. The STGP12NB60KD is designed and marketed as a single IGBT chip, meaning it has only one junction between each of its three terminals. This feature makes it particularly suitable for medium- and high-voltage applications, as it can be more easily integrated into power electronic applications than a multiple IGBT chip. It has a voltage range of 600V and is able to handle currents of up to 12A. The main application fields of the STGP12NB60KD IGBT are motor control, boost circuits, electric heaters, and uninterruptible power supplies (UPS). It is also a suitable choice for high-frequency/switching power supplies and inverters as it combines the low on-state conduction losses of a MOSFET with the low gate drive voltage requirements of a bipolar transistor.The STGP12NB60KD IGBT is able to switch on very quickly due to its low turn-on/turn-off times of less than 12ns and its low on-state voltage drop of less than 1.5V. This makes it ideal for applications requiring fast switching times while also reducing power losses in the system. Additionally, due to its low power consumption, the device is well suited for portable devices or automotive applications.In terms of its working principles, the STGP12NB60KD IGBT is a voltage-controlled device. When a bias voltage is applied between its gate and emitter terminals, the IGBT will turn on, allowing current to flow from its collector to its emitter. When the bias voltage is removed, the IGBT will turn off, blocking current from passing through. This switching action of the IGBT is what makes it so useful for power control and power switching applications in a variety of industries.The STGP12NB60KD IGBT is a versatile device, offering a wide range of capabilities suitable for many different applications. Thanks to its low power consumption, fast switching times, and low voltage requirements, the STGP12NB60KD IGBT provides an ideal solution for use in a variety of power control and power switching applications.ConclusionThe STGP12NB60KD IGBT is a single IGBT chip designed and marketed for power control and power switching applications. It is capable of handling up to 12A of current and offers excellent switching and low power consumption characteristics. It is typically used in motor control, boost circuits, electric heaters, and uninterruptible power supplies (UPS) applications, and its operation is based on a bias voltage applied between the gate and emitter terminals. The STGP12NB60KD IGBT is an ideal solution for use in a variety of power control and power switching applications.

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