STK30N2LLH5 Allicdata Electronics
Allicdata Part #:

497-10302-2-ND

Manufacturer Part#:

STK30N2LLH5

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 25V 30A POLARPAK
More Detail: N-Channel 25V 30A (Tc) 5.2W (Tc) Surface Mount Pol...
DataSheet: STK30N2LLH5 datasheetSTK30N2LLH5 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: STripFET™ V
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2290pF @ 25V
FET Feature: --
Power Dissipation (Max): 5.2W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PolarPak®
Package / Case: PolarPak®
Description

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The STK30N2LLH5 is a single N-channel low-capacitance power MOSFET specifically designed for applications where very fast switching and high efficiency is required. This type of MOSFET is commonly used for current switching and power control purposes in a wide range of applications.

The STK30N2LLH5 is a single-channel enhancement-mode power MOSFET which has a high continuous drain current, low on-resistance, and low gate charge. It is capable of withstanding load dump conditions up to +60V, making it ideal for use in automotive applications. The MOSFET features a low on-resistance drain-source which helps to reduce the power dissipation of the device and helps to conserve power. In addition, it has a low input capacitance which helps to reduce the switching time.

The STK30N2LLH5 is typically used in automotive applications such as engine control, electric motor control, cooling fan control, air conditioning system, and electric window motor control. It can also be used in applications such as power converters, power amplifiers, and DC-DC converters. In addition, this type of MOSFET can be used for switching applications that require high currents and high power, such as inverter, motor drives, and high-power LED controllers.

The working principle of the STK30N2LLH5 is based on the application of gate voltage, or gate-source voltage. When the gate-source voltage is applied to the MOSFET, it results in a large increase in the conductivity of the MOSFET resulting in a decrease in the resistance between the drain and source terminals which results in higher current flow through the device. This current flow is proportional to the amount of gate voltage that is applied.

The current carrying capability of the STK30N2LLH5 is limited by the maximum drain-source current rating which is up to 30A. The MOSFET also has a maximum drain-source breakdown voltage of 250V, allowing it to be used in applications requiring higher voltage. Additionally, the MOSFET also has a maximum drain-source voltage rating of 30V, which means that it can be used for applications requiring low-voltage switching.

The STK30N2LLH5 is a popular device for use in many types of applications due to its low on-resistance, high efficiency, fast switching capabilities, and high current carrying capability. It is also a low-cost device, making it an attractive option for many applications. As such, this type of MOSFET is often used in automotive, consumer electronics, and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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