STK38N3LLH5

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The STK38N3LLH5 is a single N-channel enhancement mode MOSFET with a third-generation trench technology design. It allows for excellent overall performance and superior RDS(on). The device is ideal for space-constrained, high-current power switching applications, particularly in automotive, communication, and computer industries.The STK38N3LLH5 has a maximum current rating of 8A and can support drain-source voltages of up to 175V. It features a low gate-source threshold voltage of 2.5V, allowing for low voltage design and improved energy efficiency. Additionally, it offers a low output capacitance of just 40pF and an on-resistance of only 7.1mΩ.

The working principle of a MOSFET is fundamentally the same as that of a transistor. A MOSFET is an insulated-gate field-effect transistor, consisting of three regions: a gate, Source and a drainage. There is an electrostatic insulation between the gate and the Source/Drain regions. When a potential difference is applied between the gate and the Source, a “depletion region” is created in the semi-conductor material, which acts as an electronic switch.

When the gate to source voltage exceeds the threshold voltage, the depletion region is reduced, allowing a free flow of electrons from the source to the drain with little resistance. This is called the ‘Cut-off’ region and is represented by a low current. Increasing the gate to source voltage further reduces the depletion region and the resistance between the source and the drain, allowing more electrons to flow through the channel, representing a high current.

The MOSFET’s current flow capacity is determined by the channel width. The material used in the channel is called the channel-stop layer. In the STK38N3LLH5, the channel-stop layer is a composite of phosphorous, arsenic and nitrogen which provides higher levels of stability, uniformity and low leakage. The voltage between the source and the drain provides the force which causes the electron to flow through the channel from the source to the drain.

Finally, the MOSFET is designed to operate in a variety of frequencies, with the most common applications being high-powered DC-DC converters for telecom, computer and automotive systems. The use of the STK38N3LLH5 allows for a more powerful and reliable system design, which can be a significant advantage in high-end applications that require a high level of per formance.

In conclusion, the STK38N3LLH5 is a single N-channel enhancement mode MOSFET with a third-generation trench technology design. It is ideal for high-current power switching applications, featuring a low gate-source threshold voltage, an on-resistance of 7.1mΩ, and a low-output capacitance of 40pF. The operating principle of a MOSFET is based on the depletion of electrons from the semi-conductive material with a gate to source voltage which determines the amount of current flowing through the device from the source to the drain.

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