STL90N10F7 Allicdata Electronics
Allicdata Part #:

497-13969-2-ND

Manufacturer Part#:

STL90N10F7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 100V POWERFLAT5X6
More Detail: N-Channel 100V 70A (Tc) 5W (Ta), 100W (Tc) Surface...
DataSheet: STL90N10F7 datasheetSTL90N10F7 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerFlat™ (5x6)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Power Dissipation (Max): 5W (Ta), 100W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3550pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Series: DeepGATE™, STripFET™ VII
Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The STL90N10F7 is an N-channel power MOSFET that is designed for use in motor control, lighting, switching, and other applications where reliable and efficient power control is needed. The power MOSFETs of the STL90N10F7 series are built using a unique combination of technologies and materials to create a remarkably reliable and power efficient device. The device is capable of operating at maximum power levels with low ON resistance and has a low gate-to-source voltage range. The STL90N10F7 is available in through-hole and surface mount packages to meet the application demand.

The STL90N10F7 provides both low ON resistance and low gate-to-source voltage. This device is designed to provide high speed switching and low gate-to-source voltage drop. The device is designed for applications such as motor control, lighting, and other applications where high power switching is needed. The low ON resistance and low gate-to-source voltage of the device allow it to operate at maximum power levels with low losses. The device can operate with a wide range of gate-to-source voltage levels, making it suitable for applications requiring high speed switching.

The device also provides a low input capacitance and high output current, allowing the device to handle large power levels. The device is available in through-hole and surface mount packages, allowing it to be used in a wide range of applications. The through-hole package is ideal for applications that require mounting the device to a printed circuit board. The surface mount package is ideal for applications where space limitations are a concern.

The working principle of the STL90N10F7 is based on the Gate-to-Source voltage (G-S) parameter. This parameter determines the current flow through the device, and thus, its power performance. The device has a low G-S voltage which contributes to its low ON resistance and high switching speed. The G-S voltage is applied to the gate of the device which allows it to regulate the current through the device. When the gate voltage increases, the current through the device increases as well, and vice versa.

The STL90N10F7 is suitable for applications where efficient power control is needed. The device can handle high current levels, has low ON resistance and gate-to-source voltage drop, and excellent thermal performance. The device is available in through-hole and surface mount packages, making it suitable for a wide range of applications. In addition, the device is designed for a wide range of temperatures and voltage levels. This makes the STL90N10F7 an ideal device for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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