Allicdata Part #: | 497-16515-2-ND |
Manufacturer Part#: |
STL92N10F7AG |
Price: | $ 0.76 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 100V 16A POWERFLAT |
More Detail: | N-Channel 100V 16A (Tc) 5W (Ta), 100W (Tc) Surface... |
DataSheet: | STL92N10F7AG Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.68954 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | PowerFlat™ (5x6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 5W (Ta), 100W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3100pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 10V |
Series: | Automotive, AEC-Q101, STripFET™ |
Rds On (Max) @ Id, Vgs: | 9.5 Ohm @ 8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 16A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The STL92N10F7AG is a N-channel depletion mode Enhancement-type Field-Effect Transistor (FET). A FET is a three-terminal electronic device which acts like an electrically controlled switch, allowing electric current to flow from an input voltage to an output voltage. FETs are commonly used in very large and complex electrical circuits, due to their low noise and low power dissipation.
The STL92N10F7AG is a Leadless Surface Mount package, designed to be mounted on the surface of a circuit board. Due to its small size, the device is highly suitable for applications with limited space and has a relatively low power dissipation. The device features a Gate-Drain voltage rating of 24V, maximum DC current of 32A, and a maximum power rating of 56W.
The STL92N10F7AG provides a wide range of potential applications, due to its unique design. One potential application is in switching power supplies, as the device is able to control large currents efficiently and with minimal power losses. The device is also well suited for motor control applications, as it can be used to switch power to the motor in order to control its speed. Additionally, the device has the potential to be used in the sensing circuitry in motion control systems.
The working principle of the STL92N10F7AG is based on the concept of a semiconductor material. A semiconductor device is formed from a material with very low electrical conductivity, such as silicon. When a voltage is applied to the Gate of the device, electrons are attracted towards the surface of the silicon and a conductive channel is formed. This allows current to flow from the Drain to the Source of the device.
The resulting current is controlled by the Gate-Source voltage, and can be used to switch the device on and off. The Gate-Source voltage must be greater than the “threshold voltage” of the device in order to cause a channel to form. The channel causes current to flow through the device, and the resulting current is proportional to the Gate-Source voltage.
The STL92N10F7AG has a low threshold voltage, which allows the device to be driven with low voltages. This makes it well suited for applications which require the ability to switch with low voltage levels. The low power dissipation of the STL92N10F7AG also makes it highly suitable for battery powered applications.
In conclusion, the STL92N10F7AG is a N-channel Enhancement-type FET with a low maximum power dissipation and a low threshold voltage. It has a wide range of potential applications, including switching power supplies, motor control, and sensing circuitry in motion control systems. The device works by forming a channel in a semiconductor material when a voltage is applied to the Gate, allowing current to flow from the Drain to the Source of the device.
The specific data is subject to PDF, and the above content is for reference
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