Allicdata Part #: | 497-17897-2-ND |
Manufacturer Part#: |
STL9P3LLH6 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET PCH 30V 9A POWERFLAT |
More Detail: | P-Channel 30V 9A (Tc) 3W (Ta) Surface Mount PowerF... |
DataSheet: | STL9P3LLH6 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | PowerFlat™ (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2615pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 24nC @ 4.5V |
Series: | STripFET™ H6 |
Rds On (Max) @ Id, Vgs: | 15 mOhm @ 4.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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STL9P3LLH6 Application Field and Working Principle
STL9P3LLH6 is a type of FET, also known as a metal oxide semiconductor field effect transistor, which is a type of transistor used to amplify and switch electronic signals and power. FETs use electric fields instead of currents to control electron behavior, making them superior to their bipolar counterparts for large-scale circuit applications. STL9P3LLH6 is a single FET, meaning it consists of one source (S), one drain (D), and one gate (G), making it a three-terminal device.
The application field of STL9P3LLH6 is mostly related to power conversion, smart grid applications, and low power amplifiers. Due to its excellent linearity and low noise, it is ideal for applications such as power converters, power management systems, and RF amplifiers. In addition, it is well-suited for signal conditioning, digital to analog conversions, and signal isolation. Furthermore, because of its low power consumption, it is often used in battery-powered applications.
The working principle of STL9P3LLH6 is relatively simple. When the gate (G) is energized, charge carriers (such as electrons or holes) starts to accumulate at the interface between the gate and the source (S) forming an inversion layer. This inversion layer changes the conductivity of the transistor and current starts to flow through the source-drain (S-D) channel. The amount of current between the source and the drain depends on the magnitude of voltage applied at the gate. Higher voltage at the gate will result in more current flow, and vice versa.
The transistor can be operated in two modes, either as a switch or an amplifier. In its switch mode, a little voltage applied at the gate will result in a large current flow between the source and the drain. As an amplifier,STL9P3LLH6 can amplify signals without much noise, making it ideal for differential signal amplifiers. It can also be easily integrated with other components in a circuit and is also compatible with most CMOS (complementary metal-oxide semiconductor) or BiCMOS (bipolar CMOS) logic families.
The specific data is subject to PDF, and the above content is for reference
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