STL9N3LLH5 Allicdata Electronics
Allicdata Part #:

497-10393-2-ND

Manufacturer Part#:

STL9N3LLH5

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 30V 9A POWERFLAT
More Detail: N-Channel 30V 9A (Tc) 2W (Ta), 50W (Tc) Surface Mo...
DataSheet: STL9N3LLH5 datasheetSTL9N3LLH5 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerFlat™ (3.3x3.3)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 50W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 724pF @ 25V
Vgs (Max): ±22V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Series: STripFET™ V
Rds On (Max) @ Id, Vgs: 19 mOhm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The STL9N3LLH5 is a Single-polarity N-channel Logic Level Enhancement Mode Field Effect Transistor (MOSFET). This type of MOSFET provides high performance power MOSFETs to meet the requirements of low-input drive and high-current applications. It is ideal for low-voltage, high-speed switching and power applications such as Switch Mode Power Supplies (SMPS), DC to DC converters, offline and synchronous rectifier, chargers, and inverters.

Basic Working Principle of STL9N3LLH5 Transistor

The basic operation of the STL9N3LLH5 transistor is similar to that of all MOSFETs. It consists of three terminals: Source,Gate, and Drain. The transistor\'s working principle is based on the flow of charge carriers (electrons or holes), which is either enabled or disabled depending on the gate-source voltage level:
  • When the Gate to Source voltage is below a certain threshold voltage, the transistor is in the OFF state, and no current passes through the device.
  • When the Gate-Source voltage is greater than the threshold voltage, the transistor is in the ON state, and a current passes between the Source and the Drain.
The threshold voltage of the STL9N3LLH5 is 4V, which is relatively low compared to other types of MOSFETs, and it allows for low drive voltage applications.

Features & Benefits of STL9N3LLH5

The STL9N3LLH5 has a number of advantages when compared to other types of MOSFETs.
  • Low Threshold Voltage: The low threshold voltage of 4V allows for low-voltage applications and makes it ideal for use in SMPSs, converters and similar power applications.
  • Low RDS(on): The low RDS(on) value of 0.017 Ω allows for higher current applications and helps reduce power loss.
  • High Current Rating: The device can handle up to 10A of continuous drain current and 20A of pulsed current.
  • Low Gate Charge: The device has a relatively low gate charge of 4nC, which helps reduce switching losses.
  • High Frequency Operation: The low gate charge and low RDS(on) allow the device to operate at high frequencies of up to 1MHz.

Applications of STL9N3LLH5

The low threshold voltage, highcurrent rating, low RDS(on) and high frequency capabilities make the STL9N3LLH5 an ideal choice for applications such as:
  • DC-DC converters
  • Switching Mode Power Supplies (SMPS)
  • Inverters
  • Synchronous Rectifiers
  • High-current switching applications

Conclusion

The STL9N3LLH5 is a Single-polarity N-channel Logic Level Enhancement Mode Field Effect Transistor (MOSFET) that provides high performance and high-current capabilities for low-voltage, high-speed switching and power applications. It features a low threshold voltage of 4V, low RDS(on) of 0.017Ω, high current ratings of 10A (continuous) and 20A (pulsed), and high frequency performance of up to 1MHz. The device is well suited for use in DC-DC converters, Switching Mode Power Supplies, Inverters, Synchronous Rectifiers, and other high-current switching applications.

The specific data is subject to PDF, and the above content is for reference

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