| Allicdata Part #: | 497-4668-2-ND |
| Manufacturer Part#: |
STN1HNK60 |
| Price: | $ 0.49 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 600V 400MA SOT223 |
| More Detail: | N-Channel 600V 400mA (Tc) 3.3W (Tc) Surface Mount ... |
| DataSheet: |  STN1HNK60 Datasheet/PDF |
| Quantity: | 4000 |
| 1 +: | $ 0.49000 |
| 10 +: | $ 0.47530 |
| 100 +: | $ 0.46550 |
| 1000 +: | $ 0.45570 |
| 10000 +: | $ 0.44100 |
| Vgs(th) (Max) @ Id: | 3.7V @ 250µA |
| Package / Case: | TO-261-4, TO-261AA |
| Supplier Device Package: | SOT-223 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 3.3W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 156pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 10V |
| Series: | SuperMESH™ |
| Rds On (Max) @ Id, Vgs: | 8.5 Ohm @ 500mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 400mA (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The STN1HNK60 is a high voltage MOSFET, manufactured by STMicroelectronics, that is among the most advanced transistors available on the market. This device features both improved on-resistance and improved gate charge for superior power management, and is ideally suited for applications needing high voltage or high current levels.
Working Principle
The STN1HNK60 is a single MOSFET transistor, meaning it is composed of a strong metal-oxide insulating layer, which is placed between two metal plates. This insulation layer is designed to prevent the flow of electricity between the metal plates, yet when a certain amount of voltage is applied across the metal plates, a thin layer of carriers (typically electrons and holes) can pass through the insulator. The presence of the carriers starts an avalanche breakdown, creating a current path to the drain and providing switching characteristics that determine the working of the MOSFET transistor.
Application Field
The STN1HNK60 transistor is well suited for high voltage, high power applications. Due to its wide dynamic range of drain current, and high voltage ratings, it is an ideal choice for a variety of power management applications that require the control of either voltage or current. It can be used for load switching, high frequency switching, RF power amplifiers, DC/DC converters, motor and lighting control, and a variety of other high power applications.
Other applications include motor controllers, video amplifiers, audio amplifiers, LED drivers, power monitors, automotive power switching systems, and high voltage DC-DC and other power supplies. The MOSFET also has the advantage of being well suited for high-frequency switching, making it ideal for applications such as high-speed data communications.
The STN1HNK60 MOSFET is ideal for a variety of industrial, commercial, and consumer applications due to its high voltage, high power capabilities and excellent power management potential. It offers outstanding performance and long-term stability, making it a great choice for any application requiring high current or high voltage levels.
The specific data is subject to PDF, and the above content is for reference
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