STN1NK80Z

Vgs(th) (Max) @ Id:	4.5V @ 50µA
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	SOT-223
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	160pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	7.7nC @ 10V
Series:	SuperMESH™
Rds On (Max) @ Id, Vgs:	16 Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	250mA (Tc)
Drain to Source Voltage (Vdss):	800V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction to STN1NK80Z

The STN1NK80Z is a state-of-the-art N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) developed by STMicroelectronics. It is a very useful, powerful and versatile transistor, being widely used in a variety of electronics applications such as power amplifiers, DC-to-DC converters, High-voltage switching and various power applications. It is ideal for switching and voltage control applications due to its ultra-low gate charge and low gate-pluuge resistance features.

Application Field of STN1NK80Z

The application field of STN1NK80Z is quite extensive and diverse. It can be utilized in many different types of applications due to its efficient characteristics. It is an ideal choice for applications such as motor control, LED lighting solutions, audio amplifiers, and power supply designs. Additionally, it is used as an effective switching device in automotive applications. It also finds use in power supplies, high-speed switching systems, and other high-performance and general purpose applications. Due to its low on-state resistance and its high current carrying capability, the STN1NK80Z can be used to change and control the voltage levels in a circuit. Moreover, it is capable of operating at high temperatures and can handle large currents, which makes it suitable for the most demanding applications. It is even considered to have low noise and low distortion levels. This makes it ideal for applications that require high precision and accuracy.

Working Principle of STN1NK80Z

The STN1NK80Z relies on the principle of a MOSFET, where a voltage applied to the gate electrode creates an electric field. This electric field creates a depletion of electric charges near the gate, which in turn, modifies the electric field between the source and drain electrodes. This change in the electric field creates a conductive channel between the two electrodes, allowing current to flow between them. The greatest advantage of the STN1NK80Z is its ability to rapidly switch between two states; on and off. When the gate voltage is applied, the electric field changes and the device is switched to its on-state, allowing current to flow between the source and the drain. Conversely, when no voltage is applied to the gate, the device is switched to its off state, which prevents the current from flowing between the source and the drain. In addition to switching voltages, the STN1NK80Z is also capable of controlling voltages; due to the ability to change the electric field between the source and the drain through the use of a gate voltage. This allows the STN1NK80Z to be used in voltage control applications, such as motor control or LED lighting solutions, which require control of the voltage in the circuit.

Conclusion

The STN1NK80Z is an extremely useful and versatile MOSFET transistor, developed by STMicroelectronics. It offers many advantages, such as a low on-state resistance and its ability to rapidly switch between two states, making it ideal for a variety of applications. Additionally, the STN1NK80Z is able to control voltages, making it suitable for applications that require precise control. These features make it a very powerful and versatile transistor, suitable for a number of applications.

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