
Allicdata Part #: | STN1NK60ZL-ND |
Manufacturer Part#: |
STN1NK60ZL |
Price: | $ 0.13 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET |
More Detail: | N-Channel 600V 300mA (Tc) 3.3W (Tc) Surface Mount ... |
DataSheet: | ![]() |
Quantity: | 1000 |
8000 +: | $ 0.12081 |
Gate Charge (Qg) (Max) @ Vgs: | 6.9nC @ 10V |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.3W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 94pF @ 25V |
Vgs (Max): | ±30V |
Series: | SuperMESH™ |
Vgs(th) (Max) @ Id: | 4.5V @ 50µA |
Rds On (Max) @ Id, Vgs: | 15 Ohm @ 400mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 300mA (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
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The STN1NK60ZL transistor is a type of Field Effect Transistor (FET) specifically a metal-oxide semiconductor field-effect transistor (MOSFET). It belongs to the category of single MOSFETs, as opposed to dual or complex ones such as multi MOSFETs and High Voltage MOSFETs. This type of FET has a broad range of application fields, from telecommunication to industrial control, making it one of the most versatile and efficient transistors available on the market. Its unique design, versatile applications and relatively low price have made it one of the most popular transistors in both commercial and industrial applications.
The STN1NK60ZL transistor is a unipolar device, which means that it can only conduct current in one direction. It is designed to provide power and control for both digital and analog circuits, making it suitable for a variety of applications. It can be used as a switch, a regulator, an amplifier, or a combination of these functions. It also has the ability to amplify very low level signals, making it ideal for sensitive applications such as medical devices or telecom systems.
The working principle of a MOSFET is based on the transfer of electric charges between the source and drain regions. To operate, an electric field is applied to the structure, creating an inversion layer. This inversion layer is a layer of electrons, which are attracted to the electric field and accumulate at the surface of the transistor. When a current is supplied at the gate of the transistor, the electrons are repelled away from the gate, and move towards the source and drain regions. This transfer of electrons is what allows the transistor to conduct current.
The STN1NK60ZL transistor has an operating voltage of up to 60V, making it suitable for a wide range of applications such as power supplies, switching applications, and so on. It is also able to handle high current levels, up to a maximum of 12A, making it ideal for applications that require a large amount of current to be switched. Furthermore, its on/off path has a delay time of less than one nanosecond, making it suitable for high frequency applications.
The STN1NK60ZL transistor can also be used for power regulation purposes. It is designed for constant-voltage, constant-current regulation and has a load current of up to 12A. It is a power transistor, which means that it is able to switch high power levels, up to 60V and 12A. This makes it suitable for a wide range of applications including LED lighting, LED TV power supplies, solar panels, and so on.
In summary, the STN1NK60ZL transistor is a versatile, efficient and cost-effective Field-Effect Transistor. Its unique design and numerous applications across a range of industries make it the go-to transistor for many design engineers. Because of its ability to handle high power levels, its detailed control of current, and its rapid switching capabilities, the STN1NK60ZL transistor is the ideal choice for many different applications.
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