STN1NF10 Allicdata Electronics
Allicdata Part #:

497-14747-2-ND

Manufacturer Part#:

STN1NF10

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 100V 1A SOT-223
More Detail: N-Channel 100V 1A (Tc) 2.5W (Tc) Surface Mount SOT...
DataSheet: STN1NF10 datasheetSTN1NF10 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 105pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
Series: STripFET™ II
Rds On (Max) @ Id, Vgs: 800 mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The STN1NF10 is one of the most popular transistors used in the field of Field-Effect Transistors (FETs). This type of transistor is characterized by its high current-carrying capacity and its low input capacitance. It is used primarily in high-power switching, power management, and signal processing applications.

The STN1NF10 is a single field-effect transistor (FET). It is constructed from a silicon semiconductor substrate and is constructed of an oxide-nitride-oxide (ONO) layer of layers. On the surface of the transistor is an oxide gate, which serves as the interface between the substrate and the gate of the transistor.

The working principle of the STN1NF10 is based on the principle of the Field-Effect Transistor. In this type of transistor, when a positive potential is applied to the gate, electron current will be generated in the channel of the transistor and this current will flow through the drain terminal. At the same time, the channel will be filled with holes (positive charges) and the electrons will be attracted to the holes, thus creating a concentration of electrons in the channel.

The STN1NF10’s application field includes use in high-power switching, power management, and signal processing. It is also used in various types of display and power control related circuits. In addition, it is useful in high-speed, low-noise applications, such as motor control, automotive, and medical applications.

The STN1NF10 is also often used in power semiconductors. Here, the FETs are used to increase the efficiency and to reduce losses in switching and power semi-conductor circuits. For example, in power switching applications, the STN1NF10 is frequently used to reduce power losses while yielding superior performance in high-power switching systems.

In signal processing applications, STN1NF10 FETs are used to amplify the signal and boost its quality. This is done by first amplifying the signal and then performing signal conversion. Here, the FETs are used to create a linear gain factor which reduces noise and distortion. This results in improved signal fidelity and less overall noise.

The STN1NF10 is also widely used in automotive and medical applications. For example, the FETs are used in the control circuits of windshield wiper motors, as well as ECUs and other automotive circuits. In the medical field, STN1NF10 FETs are used in channels between electrodes and ECG machines, as well as in dialysis and other medical devices.

In summary, the STN1NF10 is one of the most popular transistors used in the field of Field-Effect Transistors (FETs). It is characterized by its high current-carrying capacity, its low input capacitance, and its ability to be used in high-power switching, power management, and signal processing applications. In addition, its applications in the automotive and medical fields make it a versatile and important transistor in the world of electronics.

The specific data is subject to PDF, and the above content is for reference

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