STQ1HN60K3-AP

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The STQ1HN60K3-AP is a high-performance power MOSFET that belongs to the family of field-effect transistors (FETs), specifically single MOSFET. This transistor is designed and manufactured using advanced, proprietary process technologies to deliver an industry-leading gate charge with very low on resistance and low input capacitance and inductance.

A power MOSFET is an electronic component which switches the flow of electric current based on the voltage applied to its gate terminal. It is used in various applications because of its very low on-resistance, fast switching speed and ease of control. The STQ1HN60K3-AP is optimally suited for use as a switching device in various applications such as DC-DC converters, UPS systems, power supplies, converts, TV sets and techs, solar inverters and other applications where robust and efficient switching is required.

The STQ1HN60K3-AP is comprised of two parts: the gate and the drain. The gate is the control element for turning the device on or off. The drain is the component that carries the output current. The device can be operated in either enhancement mode (when the gate voltage is more than the threshold voltage at which current flow through the channel) or depletion mode (when the gate voltage is below the threshold voltage). It is a “normally-on” type device meaning that current will flow when the gate voltage is at 0V.

The STQ1HN60K3-AP is designed to provide low on-resistance and fast switching speed. It is also very efficient in terms of its gate charge. The gate charge is the power that must be applied to control the device. The lower the gate charge, the more efficient the device is. It has a lower gate charge than comparable power MOSFETs, offering improved circuit efficiency and better signal integrity.

The STQ1HN60K3-AP is also optimized for low capacitance and inductance. Capacitance is the ability of a transistor to store energy, while inductance is the electrical property of a circuit or component by which its voltage can be induced in units of amperes per second. Lower capacitance and inductance values reduce signal distortions caused by gate switching events, thus improving signal integrity. This improved signal integrity allows for faster switching speeds and higher current carrying capacities.

The STQ1HN60K3-AP is a robust and efficient power MOSFET that is optimally suited for a wide range of applications where fast switching and low on-resistance are required. It has a low gate charge, low capacitance and inductance values, and is designed for improved signal integrity. This makes it suitable for use in applications such as DC-DC converters, UPS systems, power supplies, TV sets, solar inverters and more.

The specific data is subject to PDF, and the above content is for reference