STQ1NK80ZR-AP Discrete Semiconductor Products

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STQ1NK80ZR-AP is a state-of-the-art enhancement mode power field-effect transistor (FET), developed specifically for use in Power MOSFETs (PMOS) applications. It is capable of both rectification and switching operations, making it an excellent solution for a wide variety of power control, solid-state switch and power supply applications. The device operates at frequency up to 20 MHz with high power conversion efficiency. The unique design of the STQ1NK80ZR-AP makes it ideal for use in both high- and low-power applications.

The STQ1NK80ZR-AP features an impressive power-to-area ratio, making it an ideal choice for PCB-based applications. The device is characterized by its low forward bias current and high voltage breakdown voltage. It is capable of carrying large current-switching capabilities of up to 10 A peak. The device employs a MOSFET structure and is based on a N-channel architecture.

The working principle of the STQ1NK80ZR-AP lies in its ability to control the amount of current passing through the device. When the gate voltage, Vgs, is less than the threshold voltage, Vth, no current flows. However, when the gate voltage is raised above the threshold voltage, current begins to flow through the device. This is known as the enhancement mode of operation. The amount of current flowing through the device is determined by the value of the gate voltage. As the gate voltage is increased, the current through the device increases.

The STQ1NK80ZR-AP features a special on-chip FastTemperatureSense (FTS) circuit which helps to protect the device from excessive temperatures. The FTS circuit helps to maintain the device\'s desired operating temperature range by adjusting the gate voltage to match VRth. This ensures that the device is not exposed to excessive temperatures during operation, which could lead to malfunction or permanent damage.

The STQ1NK80ZR-AP is readily available in a variety of packages including the TO-220, TO-263, and TO-277 styles. The device is rated for a junction temperature range of -55°C to +170°C, making it suitable for a wide range of applications.

The STQ1NK80ZR-AP is an excellent choice for a variety of applications such as AC/DC, DC/DC converter modules, power supplies, magnetic ballasts, switching power controllers, automotive, and industrial equipment. Its ability to handle large current-switching capabilities makes it an ideal choice for a wide range of switching and power control applications.

In summary, the STQ1NK80ZR-AP is a state-of-the-art enhancement mode power field-effect transistor (FET). It is designed for use in a wide variety of power control, solid-state switch and power supply applications. The device operates at frequency up to 20 MHz and is capable of handling large current-switching capabilities of up to 10 A peak. The STQ1NK80ZR-AP is available in a variety of packages and is rated for a junction temperature range of -55°C to +170°C, making it suitable for a wide range of applications.

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