STQ1HNK60R-AP Discrete Semiconductor Products

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STQ1HNK60R-AP is a single channel N-Channel MOSFET with a voltage rating of 60V, an RDS(ON) of 1.4 mOhm, an ID of 58A, an RGS of 3.8 Ohm, and a gate charge of 19nC. It is a power MOSFET used for switching applications.

Application Fields

STQ1HNK60R-AP is primarily used for DC/DC converters and power supplies. It is an ideal controller in power supplies providing up to 20W of power output. It can also be used in low voltage circuits, such as those that use a single cell lithium battery. STQ1HNK60R-AP is also used in automotive applications, including engine start/stop, energy regeneration, active aerodynamics, power switches, ECM, and starter relays.

Working Principle

The STQ1HNK60R-AP is an N-channel MOSFET, which is a metal–oxide–semiconductor field-effect transistor (MOSFET). MOSFETs are used in many types of electronic circuits, from digital logic gates to power amplifiers. Because of their low power consumption and high switching speed, they are well-suited for use in power electronics devices.

The STQ1HNK60R-AP is built with an N channel MOSFET structure, which is formed by a channel of electrons running between the source and the drain terminals. By applying a voltage to the gate terminal, an electric field is generated, which controls the flow of electrons through the channel. The higher the gate voltage, the larger the amount of current that can flow between the source and the drain terminals. This allows the STQ1HNK60R-AP to switch on or off a power source quickly, reliably, and with very little energy loss.

This MOSFET also has a very low on-resistance or RDS(ON). This means that the voltage drop across the MOSFET is very low and the power loss is negligible. Additionally, the STQ1HNK60R-AP has a low gate-source capacitance, which means that it is able to switch on and off quickly, allowing the device to operate at high frequencies.

The STQ1HNK60R-AP is also designed to provide enhanced device protection. It is built with internal circuitry that limits voltage transients and is able to survive high levels of inrush current. The device also employs a soft-start circuit, which prevents current surges at start-up.

The STQ1HNK60R-AP has a low gate control charge and a fast switching speed. This means that it is able to switch quickly and reliably, allowing it to provide reliable and efficient power conversion.

Conclusion

The STQ1HNK60R-AP is an ideal choice for power switching applications, such as DC/DC converters and power supplies. It has an RDS(ON) of 1.4 mOhm, a voltage rating of 60V, an ID of 58A, and a gate charge of 19nC. Its low gate control charge and fast switching speed allow it to reliably provide efficient and reliable power conversion. The device also features enhanced device protection, making it suitable for use in automotive applications.

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