Vgs(th) (Max) @ Id:	3.7V @ 250µA
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package:	TO-92-3
Mounting Type:	Through Hole
Operating Temperature:	-65°C ~ 150°C (TJ)
Power Dissipation (Max):	3.1W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	160pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	7nC @ 10V
Series:	SuperMESH™
Rds On (Max) @ Id, Vgs:	4.5 Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	500mA (Tc)
Drain to Source Voltage (Vdss):	450V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Box (TB)

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Introduction

STQ1NC45R-AP is a MOSFET transistor that can be used for a variety of applications. This type of transistor is often used for higher power switching, relay switching, and motion control. The STQ1NC45R-AP is especially suitable for higher power applications due to its roughly symmetrical gate threshold curve. In this article, we discuss the application fields and working principle of the STQ1NC45R-AP. We focus on its features, use cases, and features to help you decide if it\'s the right transistor for your application.

Application Fields of STQ1NC45R-AP

The STQ1NC45R-AP is a MOSFET transistor that is suitable for a variety of applications, including logic switching, motor control, and power control.

Logic Switching

The STQ1NC45R-AP has relatively symmetrical gate threshold curves, making it ideal for use in logic switching applications. This type of transistor is often used in circuits that require a high level of speed, power efficiency, and switching speed.

Motor Control

The STQ1NC45R-AP is also useful for motor control applications. It can be used in applications such as velocity control, speed control, current control, and power control. Because of its low on-state resistance, it is very efficient at delivering the necessary power for motor control.

Power Control

The STQ1NC45R-AP is well-suited for power control applications. Its fast switching speed makes it a good choice for systems that require high-speed power control. Its low on-state resistance also makes it an efficient choice for power control.

Working Principle of STQ1NC45R-AP

The STQ1NC45R-AP is a MOSFET transistor and operates based on the principle of the metal-oxide semiconductor field effect transistor (MOSFET). The STQ1NC45R-AP transistor is composed of two parts: the channel and the gate.

Channel

The channel of the STQ1NC45R-AP is composed of a source and a drain. The source and drain are closely spaced and are made of different materials. The source is typically made of metal and is negatively charged. The drain is typically made of N-type silicon and is positively charged.

Gate

The gate is composed of a negatively charged gate electrode and an insulated gate electrode. The gate electrode is connected to the source, while the insulated gate electrode is connected to the drain. When a positive voltage is applied to the gate electrode, it attracts the electrons in the source to the gate electrode and prevents them from passing to the drain. When a negative voltage is applied to the gate electrode, the electrons are repelled and can pass through the channel to the drain. The magnitude of the voltage applied to the gate determines the amount of current that can pass through the channel. The STQ1NC45R-AP MOSFET has a relatively symmetrical gate threshold curve, which allows it to switch quickly and efficiently between low and high voltage levels.

Conclusion

The STQ1NC45R-AP is a MOSFET transistor that can be used for a variety of applications. It is suitable for logic switching, motor control, and power control applications. Its symmetrical gate threshold curve allows it to switch quickly and efficiently between low and high voltage levels. The operation of the STQ1NC45R-AP is based on the principle of the metal-oxide semiconductor field effect transistor (MOSFET). By understanding its features and use cases, you can decide if the STQ1NC45R-AP is the right transistor for your application.

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