| Allicdata Part #: | 497-12344-3-ND |
| Manufacturer Part#: |
STQ2HNK60ZR-AP |
| Price: | $ 0.23 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 600V 0.5A TO-92 |
| More Detail: | N-Channel 600V 500mA (Tc) 3W (Tc) Through Hole TO-... |
| DataSheet: |  STQ2HNK60ZR-AP Datasheet/PDF |
| Quantity: | 8000 |
| 1 +: | $ 0.23000 |
| 10 +: | $ 0.22310 |
| 100 +: | $ 0.21850 |
| 1000 +: | $ 0.21390 |
| 10000 +: | $ 0.20700 |
| Vgs(th) (Max) @ Id: | 4.5V @ 50µA |
| Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Supplier Device Package: | TO-92-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 3W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 280pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
| Series: | SuperMESH™ |
| Rds On (Max) @ Id, Vgs: | 4.8 Ohm @ 1A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 500mA (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Box (TB) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The STQ2HNK60ZR-AP is a Single, N-channel and Enhancement Mode Power MOSFET that is specifically designed to address the needs of modern high speed switching applications.
This Power MOSFET is one of the industry-leading products in terms of low on-state resistance, gate charge, and capacitance. With its excellent switching performance, this device is suitable for use in a wide variety of applications, including power management, industrial servo-control, audio amplifiers, and digital switching.
The STQ2HNK60ZR-AP has a low on-state resistance (RDS(on)) of 0.59mΩ, a gate charge (QG) of 36.4 nC, and an input capacitance (Ciss) of 3300 pF. This device offers an extended power dissipated limit of up to 20 W, and an output current limit of up to 12 A. It also has an integrated body diode for bidirectional current flow protection.
The STQ2HNK60ZR-AP is ideal for switching high voltages and high currents, and is capable of operating at frequencies up to 500 kHz, making it suitable for use in high speed applications such as motor control and inverters.
In terms of its working principle, the STQ2HNK60ZR-AP is a voltage-controlled MOSFET. It is composed of a drain, a source, and a gate. The device is then controlled by the amount of voltage that is applied to the gate. When a voltage higher than the threshold voltage (VGSth) is applied to the gate, the device is turned “on”, which allows current to flow from the drain to the source. When a voltage lower than the threshold voltage is applied, the device is turned “off”, and current is prevented from flowing from the drain to source.
The STQ2HNK60ZR-AP is ideal for a variety of applications, including motor control and switching high voltages and currents in power management systems. Its low on-state resistance, gate charge, and capacitance make it an excellent choice for switching applications in high speed applications.
The specific data is subject to PDF, and the above content is for reference
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