STQ2NK60ZR-AP

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The STQ2NK60ZR-AP is a N-channel power metal-oxide-semiconductor field-effect transistor (MOSFET) commonly used in automotive applications. As part of the larger ST family of products, the STQ2NK60ZR-AP is designed to offer superior levels of efficiency and performance in applications that require robust power handling capabilities. Likewise, its compact form factor—with a maximum 2.7mm height—ensures that it allows for easy integration into applications that require a minimal space requirement. This makes the STQ2NK60ZR-AP a reliable solution for applications such as automotive powertrains, power supplies, and motor drives. 

The STQ2NK60ZR-AP operates as a power MOSFET switch, which allows it to be used in a wide range of applications. In essence, it acts as a switching element that can be used to control the flow of currents when activated by a control signal. Specifically, the STQ2NK60ZR-AP has an on-state resistance (RDS_on) of about 0.0022 ohm and a maximum drain current (IDM) of 60A—figures that allow the device to provide efficient and reliable power routing in applications that require significant levels of current.

One of the key advantages of the STQ2NK60ZR-AP lies in its operating temperature range. Specifically, the temperature range of the device is -55 to 150°C, which allows it to work in a variety of environmental conditions with limited risk of thermal damage. This can be a great benefit in applications that require exposure to extreme temperatures or changes in temperature, such as automotive powertrains and motor drives.

The STQ2NK60ZR-AP is also designed with a variety of other features that improve its performance. For instance, it has an integrated electrostatic discharge (ESD) protection circuit, which allows the device to continue functioning in the event of an ESD event. This is accomplished by using a charge-pump current derating circuit, which monitors the input signal and reduces the drain current to protect the device from ESD.

Finally, the STQ2NK60ZR-AP is designed with an internally integrated fast and safe avalanche energy absorption signal. This signal works in combination with the ESD protection circuit to provide the device with an extra layer of protection from ESD. The STQ2NK60ZR-AP also has an over-temperature protection (OTP) feature, which helps to protect the device from overheating.

In summary, the STQ2NK60ZR-AP is a N-channel power MOSFET designed for automotive applications, offering superior levels of efficiency and performance. It offers a maximum 2.7mm height and has an RDSon of 0.0022 ohm and a maximum drain current of 60A. The device is also designed with features such as an integrated ESD protection circuit and an OTP feature, allowing the device to operate in a variety of environmental conditions with minimal risk of thermal damage.

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