STQ2LN60K3-AP

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STQ2LN60K3-AP is an N-channel MOSFET belonging to the family of Depletion-Mode Enhancement FET\'s, or DEPFETs. These kinds of Field-Effect Transistors (FETs) are characterized by their control and protection elements, which allow them to be used not just as switches, but also as amplifiers and voltage cleaners.

The gate structure of STQ2LN60K3-AP consists of two (2) insulated-gate electrodes, with one (1) on each side. The N-channel is formed between the two gates. An attractive feature of DEPFETs is that the source-drain current density is four (4) to six (6) times higher than conventional Field-Effect Transistors, allowing for more efficient signal-switching and signal-modifying performance than a normal FET.

The STQ2LN60K3-AP has a maximum allowed gate-source voltage of 12 V, and a maximum continuous drain current of 6 A. The transistor offers superior parameters for operation in the -55°C to 150°C temperature range. As such, it is particularly suitable for discrete circuits and power integration applications that require efficient operation at high voltage levels, while also providing benefits in terms of size, weight and ease of integration compared to other technologies.

The working principle of the STQ2LN60K3-AP is based on the basic FET operating principle. The device is controlled by the gate voltage, which determines whether current can flow from the source to the drain. When the gate voltage is zero (0), the transistor is in its “off” state, when the source-to-drain current is blocked. When the gate voltage is positive, the source-to-drain path is opened, and current can flow.

The STQ2LN60K3-AP is particularly suitable for use in high voltage applications such as motor control, solar applications and power systems. The device can also be used in precision analog and digital circuits, where its high-frequency capabilities and low leakage currents make it an ideal choice. Other applications include motor drivers, graphical user interface (GUI) gesture control, digital camera stabilization, tracking and navigation, and remote controls.

In summary, the STQ2LN60K3-AP is an N-channel MOSFET that belongs to the family of Depletion-Mode Enhancement FET (DEPFET) devices. It offers superior parameters for operation in the -55°C to 150°C temperature range, making it suitable for discrete circuits and power integration applications requiring high voltage levels. The transistor is controlled by the gate voltage, and can be used in a variety of applications, from motor control to graphical user interface (GUI) gesture control.

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