STQ2N62K3-AP Allicdata Electronics
Allicdata Part #:

STQ2N62K3-AP-ND

Manufacturer Part#:

STQ2N62K3-AP

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 620V 2.2A SUPERMESH
More Detail: MOSFET N-CH 620V 2.2A SUPERMESH
DataSheet: STQ2N62K3-AP datasheetSTQ2N62K3-AP Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
FET Type: --
Technology: --
Current - Continuous Drain (Id) @ 25°C: --
Rds On (Max) @ Id, Vgs: --
Vgs(th) (Max) @ Id: --
FET Feature: --
Power Dissipation (Max): --
Operating Temperature: --
Mounting Type: Through Hole
Supplier Device Package: TO-92
Package / Case: --
Description

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The STQ2N62K3-AP is a part of ST Microelectronics\' product line, an N-channel MOSFET transistor. It is a 20V voltage rated device, meaning it can handle a maximum voltage of 20V between its source and drain terminals. It has an on resistance of 28 at 4.5V and can handle up to 4W of continuous power dissipation.

Applications

The STQ2N62K3-AP is primarily used in switching and latching applications, such as in power supplies, DC to DC converters, automotive controls, and audio systems. Its low on-resistance makes it an ideal choice for high-efficiency applications. It is also popular for use as a replacement for discrete bipolar transistors or as a driver for other FETs.

Working Principle

The STQ2N62K3-AP is a type of MOSFET transistor, a Metal Oxide Semiconductor Field-Effect Transistor. This device has three terminals; a gate, a source, and a drain. The gate functions as a control terminal for the device, and when a voltage is used to change the voltage of the gate, the voltage between the source and drain will also change. This is because the MOSFET has a gate oxide layer that is responsible for controlling the flow of current between the source and the drain.

When voltage is applied to the gate of the STQ2N6K3-AP, an electric field is created and charges are attracted to the gate oxide. This increases the capacitance of the gate and the current flowing between the source and the drain is increased. The amount of current flowing through the transistor is proportional to the gate voltage applied, so the current can be precisely controlled by applying a controlled voltage to the gate. This allows the transistor to be operated as a switch, opening or closing the flow of current in a circuit.

Conclusion

The STQ2N62K3-AP is a 20V N-channel MOSFET transistor commonly used in switching and latching applications. It has a low on-resistance, making it an ideal choice for high-efficiency applications. The device operates based on the principle of the MOSFET transistor, using a voltage applied to the gate to control the current flow between the source and the drain.

The specific data is subject to PDF, and the above content is for reference

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