STU40N2LH5 Allicdata Electronics
Allicdata Part #:

STU40N2LH5-ND

Manufacturer Part#:

STU40N2LH5

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 25V 40A IPAK
More Detail: N-Channel 25V 40A (Tc) 35W (Tc) Through Hole I-PAK
DataSheet: STU40N2LH5 datasheetSTU40N2LH5 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: STripFET™ V
Packaging: Tube 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 12.4 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 5V
Vgs (Max): ±22V
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 20V
FET Feature: --
Power Dissipation (Max): 35W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: I-PAK
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Description

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STU40N2LH5 is a type of single n-channel Junction Field Effect Transistor (JFET) sourced by STMicroelectronics. It is offered in a metal TO-263 (D2Pak) package. This device is a high performance device with low capacitance, a low gate source leakage current and low noise characteristics. It is widely used for various applications including audio amplifiers, switching, logic level drivers and in precision analog circuits.

The STU40N2LH5 JFET features a unique symmetrical self-aligned structure which is obtained by using an advanced cleaved plane process (AGILENT) technology. This technology makes the JFETs very reliable with better than usual performance. The device has a breakdown voltage of 40V, a drain-source on-resistance of 10 ohms, a gate-source capacitance of 6.5pF and a drain-source capacitance of 5pF.

The device has a square drain-gate junction and a reverse-biased p-n junction between the drain and the gate. This makes the device very efficient in preventing external fields from affecting the flow of electrons through the channel. This is known as the "body effect", which is a common feature of single-gate JFETs. The body effect helps to improve the linearity of the device, resulting in better performance.

The STU40N2LH5 is suitable for applications where low noise and low gate-source capacitance are important. The device has very low gate-source capacitance, so it can be used in sensitive analog circuits where the signal level has to be preserved with minimal distortion. The device is also suitable for switching applications such as low voltage logic level drivers, inverters, and amplifiers. The device can also be used in active filters, power management systems and RF circuits.

The STU40N2LH5 is a versatile single-gate Junction Field Effect Transistor which can be used for a variety of applications. It has very low gate-source capacitance, a low breakdown voltage and a low on-resistance. This makes the device ideal for use in analog circuits, switching applications and RF circuits. The device is also very reliable and offers excellent performance.

The specific data is subject to PDF, and the above content is for reference

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