STU4N62K3

Vgs(th) (Max) @ Id:	4.5V @ 50µA
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	I-PAK
Mounting Type:	Through Hole
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	70W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	550pF @ 50V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	22nC @ 10V
Series:	SuperMESH3™
Rds On (Max) @ Id, Vgs:	2 Ohm @ 1.9A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	3.8A (Tc)
Drain to Source Voltage (Vdss):	620V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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Introduction

STU4N62K3 is a field-effect transistor (FET) developed by STMicroelectronics. STU4N62K3 is a Metal-oxide-semiconductor FET (MOSFET), a type of FET whose channel is insulated from the gate of the device, allowing for electric charge conduction via a narrow channel without any appreciable resistance. STU4N62K3 has three terminals – source, gate, and drain – and is typically used in power electronics applications, as well as analog switching, audio frequency power amplifiers, and so on required in numerous commercial applications and industrial systems. As one of the simplest and most widely used FETs, it has several advantages over conventional transistors, such as faster switching response, better noise immunity, adjustable conductance (“on-state” resistance), and, most importantly, less power dissipation.

Types of MOSFETs

MOSFETs may be categorized into three types depending on their operating voltage and drain-source resistance. The STU4N62K3 belongs to the Single type MOSFET category. Single type MOSFETs have high operating voltage, low drain-source resistance, and low gate bias voltage.

Applications of STU4N62K3

STU4N62K3 is perfectly suitable for various applications requiring low-voltage operations and high energy efficiency, such as in lightning, motor control, audio power amplifiers, power supplies and computing. As an isolated MOSFET, it is also used in interfaces between low power signals and high power outputs, such as voltage regulators. Additionally, it is also a suitable choice in ripple filtering circuits, as it is fast and capable of dissipating relatively low heat.

Working Principle of STU4N62K3

The working principle of MOSFETs, including the STU4N62K3, is highly dependent on the voltage applied to the gate. When the gate voltage is below the threshold of the device, the current that can flow through the device is minimum and the device is said to be in the ‘Off’ state. When the gate voltage is increased, the current that flows through the device also increases and the device is in the ‘On’ state. The resistance of the MOSFET controls the current flowing through it. This property makes the STU4N62K3 suitable for use as a low-level analog switch.

Conclusion

The STU4N62K3 MOSFET is a popular device used in power electronics applications due to its fast switching response, adjustable conductance, and low power dissipation. It is ideal for low-voltage operations and offers good energy efficiency. Its working principle is governed by the gate voltage, which when increased puts it in the ‘On’ state and when decreased puts it in the ‘Off’ state. This property makes it an ideal choice for low-level analog switching and ripple filtering circuits.

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