Allicdata Part #: | 497-14578-5-ND |
Manufacturer Part#: |
STU4N80K5 |
Price: | $ 1.39 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 800V 3A IPAK |
More Detail: | N-Channel 800V 3A (Tc) 60W (Tc) Through Hole IPAK ... |
DataSheet: | STU4N80K5 Datasheet/PDF |
Quantity: | 5030 |
1 +: | $ 1.26630 |
75 +: | $ 1.01228 |
150 +: | $ 0.88574 |
525 +: | $ 0.68690 |
1050 +: | $ 0.54229 |
Vgs(th) (Max) @ Id: | 5V @ 100µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | IPAK (TO-251) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 60W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 175pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 10.5nC @ 10V |
Series: | SuperMESH5™ |
Rds On (Max) @ Id, Vgs: | 2.5 Ohm @ 1.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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STU4N80K5 is a high-performance N-channel low voltage MOSFET, which is manufactured by Texas Instruments specifically for advanced power management applications. It is one of the most popular power transistors available on the market today, as it offers high-efficiency performance, excellent thermal properties, and low on-resistance.
The STU4N80K5 has a current rating of up to 8A and a voltage rating of up to 50V. Its better-than-usual thermal performance helps it regulate temperatures, reduce heat sink size, and reduce power dissipation. It also has a low gate threshold voltage and fast switching speed, allowing a higher level of efficiency and improved performance.
The STU4N80K5 is designed to be used as a high-drive MOSFET in a wide range of applications including automotive, ON/OFF control, buck/boost converters, and power management. Its power management capabilities enable it to be used as a Lighting Control, Battery Management, and Baseband Processor in High Efficiency Systems. It is also suitable for applications such as Light Emitting Diode (LED) current control, solid state relay (SSR) control, and power stages.
The STU4N80K5 features an integrated body diode that offers low forward voltage drop, reverse recovery time, and efficiency. This diode helps boost power output and efficiency, while reducing conduction losses. It also has a maximum operating temperature of 175°C, which allows it to operate without interruption in higher temperature environments.
The working principle of the STU4N80K5 is simple. It consists of a metal-oxide-semiconductor field-effect transistor (MOSFET), which operates by the application of a voltage across its gate to control the current in its drain-source channel. The gate can be used to switch the MOSFET between two separate states, “on” and “off” states. When the MOSFET is in the “on” state, it allows a certain amount of current to flow from its source to its drain, while in the “off” state, the current is prevented from flowing.
The STU4N80K5 offers several other advantages as well. Its small size makes it ideal for use in a variety of applications. It also offers excellent immunity to noise and easy parallel switching. This makes it easy to use in multiple-MOSFET systems, increasing the overall power efficiency and system reliability.
Overall, the STU4N80K5 is an excellent choice for advanced power management applications due to its many features. Its high current rating, low thermal resistance, and higher operating temperatures make it an ideal choice for applications that require a high level of efficiency and power management. Its low gate threshold and fast switching speed also enhance its performance, reliability, and overall efficiency.
The specific data is subject to PDF, and the above content is for reference
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