STU4N52K3

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The STU4N52K3 is a single enhancement-mode MOSFET commonly used in power applications such as power tools, robotics, and even automotive applications. It is a vertical double-diffused MOSFET (VDMOS) that supports very large gate-source voltage (Vgs) and drain-source voltage (Vds) levels, making it suitable for high-power applications. As with any MOSFET, it is an insulated-gate field-effect transistor (IGFET), which means the channel between the source and drain is controlled by the gate electrode, resulting in a wide range of operating characteristics.

STU4N52K3 MOSFETs are designed with a VDMOS structure that is composed of two diffused regions in the vertical direction. This arrangement allows the device to support high voltage and power levels while still being able to handle high gate charge values. The diffusion regions are separated by a double gate oxide layer, which further improves the gate control and allows for a more efficient operation over a wide range of loads. The STU4N52K3 is able to handle drain-source voltages of up to 150 volts (Vds) and gate-source voltages of up to 30 volts (Vgs). Its breakdown voltage is rated at 110V and it can handle drain currents of up to 112 A (Id).

The working principle of the STU4N52K3 MOSFET is similar to that of other MOSFETs. When the gate voltage is greater than the threshold voltage, the MOSFET becomes conducting and begins conducting current from drain to source. The current flow is determined by the intrinsic gain of the MOSFET, which is a measure of how well the MOSFET can control current flow in relation to the gate voltage. The higher the intrinsic gain, the higher the current that can be controlled by the MOSFET.The STU4N52K3 is a very popular MOSFET for power management applications because of its high efficiency, low on-state resistance, low gate charge and wide operating temperature range. It is also available in a variety of packages, making it easy to accommodate in different scenarios. Furthermore, it is able to support a wide range of drain-source voltages and gate-source voltages, making it suitable for a wide range of applications.

The STU4N52K3 MOSFET has a wide range of applications, including motor control, intelligent displays, and industrial control. It can be used in a variety of applications, including motor control, power switching, low speed motor control, and thyristor and triac control. It is commonly used in power related applications such as power supplies, AC and DC motor control, DC-DC converters, load switching, and PFCs (power factor correction). It is also used in high voltage transmission and low voltage switching applications. The STU4N52K3 is also used in AC and DC motor drives, which require high power control and high frequency operation, as well as for automotive applications.

In summary, the STU4N52K3 is an enhancement-mode MOSFET commonly used in power applications. It has a vertical double-diffused MOSFET structure that provides high voltage, high power, and high gate charge support. Its well-defined characteristics make it suitable for a wide range of applications, including motor control, power switching, motor drives, AC/DC motor control, and automotive applications. The STU4N52K3 is capable of controlling drain currents up to 112 A and gate-source voltages up to 30 volts, which makes it a reliable choice for any high-power application.

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