STU80N4F6

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For those looking for an enhanced field of understanding and efficient operation of transistors and FETs, the STU80N4F6 is an ideal choice. It is a potential device that is easily integrated into modern solutions, in terms of its applicability, working principles, and design. This article explores an overview of the STU80N4F6, diving into its applications, working principles, and what to look out for in the device.

STU80N4F6: An Overview

The STU80N4F6 is a power metal-oxide semiconductor field-effect transistor (MOSFET). It is manufactured by STMicroelectronics, and is classified as a low voltage single N-type FET. It is housed in a TO-220 and features a package of 6 leads. The STU80N4F6 can be used to drive a variety of loads without an external driver, as it features an enhanced body diode, as well as low input and output capacitance.

Applications

The STU80N4F6 is an ideal choice for a variety of applications. It is most commonly used in motor control solutions, as it offers a low turn-off time. Additionally, it is also used in gate, power supply, and power management solutions, as it offers low on-resistance and low on-time, as well as fast switching capabilities. It is also used in applications such as the implementation of Pulse-Width Modulation (PWM) and switching regulation solutions.

Working Principle

The STU80N4F6 is a single N-type metal-oxide semiconductor field-effect transistor (MOSFET). As such, it works on the principle of MOSFETs, where the current between source and drain is controlled. The voltage at the gate determines the current through the channel passing between the source and the drain. When a small voltage is applied to the gate, a small electric field is created, which causes electrons to be attracted towards the gate and away from the channel. This reduces current flow through the channel.

When a higher voltage is applied to the gate, the electrons are attracted towards the gate more strongly, creating a stronger electric field which reduces the resistance of the channel further. This allows more current to pass through the channel. The action of voltage at the gate controlling to current through the channel is known as the Field Effect. The FET works on this principle when controlling the current, allowing a voltage across the drain and source to be controlled.

Features

One of the major advantages of the STU80N4F6 is its low voltage single N-Type FET. It offers a turn-off time that is typically 8-10ns, and a maximum drain to source voltage of 40v. The device is also rated at a drain current of 9A, which makes it ideal for implementations with higher current load. Additionally, it offers low input capacitance, which helps reduce switching times, as well as an enhanced body diode for ease of integration.

In terms of design, the STU80N4F6 features a 6 lead package, housed in a TO-220. This makes it easy to integrate into most design solutions. The device also features a low gate resistance, which allows for lower power dissipation, as well as an improved safe-operating area. The improved body diode allows for a greater area of safe operation.

Conclusion

In conclusion, the STU80N4F6 is a low voltage single N-Type FET, ideal for applications such as motor control, gate switching, power supply, and power management. It can also be used to implement PWM and switching regulations. The FET works on the principle of MOSFETs, where the current between the source and the drain is controlled by the voltage applied to the gate. The device features an enhanced body diode, a low gate resistance, a turn-off time of 8-10ns, and a package of 6 leads, housed in a TO-220.

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