STU8NM60ND Allicdata Electronics
Allicdata Part #:

STU8NM60ND-ND

Manufacturer Part#:

STU8NM60ND

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 600V 7A IPAK
More Detail: N-Channel 600V 7A (Tc) 70W (Tc) Through Hole I-PAK
DataSheet: STU8NM60ND datasheetSTU8NM60ND Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: I-PAK
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 70W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Series: FDmesh™ II
Rds On (Max) @ Id, Vgs: 700 mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The STU8NM60ND is a common-source power MOSFET with an N-channel designed for use in a variety of applications. It has a maximum drain-source voltage of 8V and a continuous drain current of 60A. This transistor is commonly used in a variety of fields, including power supply, automotive, audio, and communication systems. It is also commonly used in other high-power switching applications, including amplifiers and converters.

A MOSFET, or Metal Oxide Semiconductor Field Effect Transistor, is a type of transistor that uses an electric field to control the electrical current. It is a unipolar device, meaning that it uses either holes or electrons as the charge carriers. The STU8NM60ND transistor is a single-gate MOSFET, which means it has only one gate electrode. Unlike a bipolar transistor, which has two or three gate electrodes, a single-gate MOSFET has only one gate electrode. This makes it easier to control the transistor\'s functions.

The STU8NM60ND transistor has several desirable qualities. It is designed to work with a low gate-source bias voltage, and is also designed to operate at low voltage levels. Additionally, this transistor has a low on-state resistance, which makes it more efficient in power switching applications. The transistor also has high switching speeds, which makes it useful for applications where fast switching is required.

The working principle of the STU8NM60ND transistor is based on the field effect. In a single-gate transistor like this one, the gate electrode is responsible for controlling the current flow between the drain and source. When a voltage is applied to the gate electrode, it creates an electric field that affects the movement of holes and electrons in the channel. This in turn affects the current that flows between the drain and source. By controlling the gate voltage, it is possible to control the current flow between the drain and source, allowing it to be used for switching applications.

Some of the most common applications of the STU8NM60ND transistor include power supply designs, switching of power, audio amplifiers, and communication systems. In power supply designs, it is used as a switch to turn off and on the power. In audio amplifiers, it is used to switch the amplifier on and off and to control the amplitude of the audio signal. And in communications systems, it is used to control the transmission and reception of signals.

The STU8NM60ND is a popular single-gate power MOSFET used in a variety of applications. Its low gate-source bias voltage, low voltage levels, low on-state resistance, and high switching speed make it a desirable choice for many power switching and audio applications. Its working principle is based on the field effect, and it is used to control the current flow between the drain and source by controlling the gate voltage.

The specific data is subject to PDF, and the above content is for reference

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