
Allicdata Part #: | 497-13658-5-ND |
Manufacturer Part#: |
STU8N80K5 |
Price: | $ 2.88 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N CH 800V 6A IPAK |
More Detail: | N-Channel 800V 6A (Tc) 110W (Tc) Through Hole TO-2... |
DataSheet: | ![]() |
Quantity: | 28 |
1 +: | $ 2.88000 |
10 +: | $ 2.79360 |
100 +: | $ 2.73600 |
1000 +: | $ 2.67840 |
10000 +: | $ 2.59200 |
Vgs(th) (Max) @ Id: | 5V @ 100µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | TO-251 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 110W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 450pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 16.5nC @ 10V |
Series: | SuperMESH5™ |
Rds On (Max) @ Id, Vgs: | 950 mOhm @ 3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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A STU8N80K5 FET, or metal-oxide-semiconductor field-effect transistor, is an important component in the electronics industry. It is a kind of three-terminal semiconductor component. Its operating principle is that under certain conditions, when the voltage on one of its terminals is changed, the current between two other terminals can be controlled accordingly. STU8N80K5 FETs are particularly useful in the applications of power switching and amplifying. They are widely used in many computing devices and other electronics gadgets.
Working Principle
The STU8N80K5 FET consists of three terminals gate, drain, and source. Gate is the input terminal, drain and source are the output terminals. In order for the device to control current between the two output terminals, the gate must be connected to a source of electricity, such as a power supply or a voltage applied externally. When voltage is applied to the gate, the electric field produced by it will adjust the concentration of charge carriers in the semiconductor material and, consequently, the conductivity of the device between the two output terminals. In this way, the output current can be controlled and switched on or off.
Types of STU8N80K5
The STU8N80K5 family includes two major types of FETs: depletion type and enhancement type. The difference between the two types lies in the way they conduct current between two output terminals when voltage is applied to the gate. In a depletion type FET, current flows between two output terminals even when no voltage is applied to the gate. When a positive voltage is applied to the gate, it will reduce the concentration of charge carriers in the semiconductor material and, consequently, reduce the flow of current between two output terminals. In contrast, in an enhancement type FET, little or no current flow between two output terminals when no voltage is applied to the gate. When a voltage is applied, it will increase the concentration of charge carriers and, consequently, increase the flow of current between two output terminals.
Applications
STU8N80K5 FETs are widely used in power switching and amplifying applications. One of the popular uses of FETs is for power switching in electronic circuits. They can be used to switch on and off the electricity supply to the circuit. As well, FETs are widely used in amplifying circuits as they can increase the power of the signal. In addition, FETs are commonly used in high-frequency and low-voltage circuits as they have low input capacitance and can be used to isolate different parts of a circuit.
Advantages
The advantages of using STU8N80K5 FETs are many. Because FETs are switching devices, they are highly efficient, consume less power and generate less heat than other semiconductor-based devices. As well, the isolation they provide between components make them suitable for use in high-frequency and low-voltage applications. Furthermore, FETs are rugged, small and come in various designs, making them suitable for a wide range of situations.
Disadvantages
The main disadvantage of using STU8N80K5 FETs is that they require high voltages to properly switch and amplify signals. As the voltages increase, the power consumption also increases, leading to increased costs for the device. Furthermore, FETs are not as sensitive as other devices, such as bipolar transistors. As a result, they may not be suitable for use in certain situations where a high level of sensitivity is required.
Conclusion
STU8N80K5 FETs are versatile devices that can be used in a variety of applications, such as power switching and amplifying. They are efficient, rugged and come in various designs. Their main disadvantage, however, is that they require high voltages to properly switch and amplify signals, leading to increased costs.
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